A-POWER AP9920GEO

AP9920GEO
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
▼ Capable of 2.5V gate drive
D2
▼ Optimal DC/DC battery application
S2
TSSOP-8
S1
G1
S1
BVDSS
30V
RDS(ON)
28mΩ
ID
D1
4.9A
▼ RoHS compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±10
V
3
[email protected]=25℃
Drain Current , VGS @ 4.5V
4.9
A
[email protected]=70℃
3
3.9
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
20
A
[email protected]=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient 3
Data and specifications subject to change without notice
Max.
Value
Unit
125
℃/W
201103051-1/4
AP9920GEO
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
30
-
-
V
VGS=4.5V, ID=4A
-
-
27
mΩ
VGS=4V, ID=4A
-
-
28
mΩ
VGS=2.5V, ID=2A
-
-
36
mΩ
0.3
-
1
V
VGS=0V, ID=250uA
2
VDS=VGS, ID=250uA
Max. Units
VDS=5V, ID=4A
-
13
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±10V
-
-
±30
uA
ID=4A
-
11
18
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
23
-
ns
tf
Fall Time
RD=15Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
950
pF
Coss
Output Capacitance
VDS=25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.2
3.3
Ω
Min.
Typ.
IS=0.8A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
2/4
AP9920GEO
30
30
5.0 V
4.5 V
3.5 V
2.5 V
ID , Drain Current (A)
T A =25 C
20
V G = 1.5 V
10
20
V G = 1.5 V
10
0
0
0
2
4
0
6
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
210
I D = 4A
V G = 4.5V
I D = 2A
170
1.5
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ )
5.0 V
4.5 V
3.5 V
2.5 V
o
T A =150 C
ID , Drain Current (A)
o
130
90
1.1
0.7
50
0.3
10
1
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
150
Fig 4. Normalized On-Resistance
2
3
1.5
Normalized VGS(th) (V)
IS(A)
100
T j , Junction Temperature ( C)
4
o
T j =150 C
50
o
Fig 3. On-Resistance v.s. Gate Voltage
2
0
T j =25 o C
1
0
1
0.5
0
0
0.2
0.4
0.6
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9920GEO
f=1.0MHz
12
1000
C iss
V DS =15V
V DS =20V
V DS =25V
9
C (pF)
VGS , Gate to Source Voltage (V)
ID= 4A
6
C oss
C rss
100
3
0
10
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
Duty factor = 0.5
0.2
0.1
0.1
PDM
0.05
t
T
0.02
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208 oC/W
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
V DS =5V
QG
ID , Drain Current (A)
15
4.5V
T j =25 o C
T j =150 o C
QGS
10
QGD
5
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4