2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: A C 1 3 The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. 2x Ø N FU LL R D 2 B FEATURES: .725/18,42 F G • PG = 17 dB typ. at 100 W/28 MHz • Omnigold™ Metalization System • Common Source configuration • RoHS compliant J M A X IM U M in ch es / m m inc he s / m m A .150 / 3.43 .160 / 4.06 .045 / 1.14 180 V 120 W @ TC = 25 °C TCH -55 °C to +150 °C TSTG -55 °C to +150 °C SYMBOL .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I ±20 V CHARACTERISTICS C H PCH L M IN IM U M 8A VGSS I D IM MAXIMUM RATINGS VDSS M K H B ID 4 E J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M N .120 / 3.05 1 = COLLECTOR .135 / 3.43 2 = BASE 3&4 = EMITTER TC = 25 °C NONETEST CONDITIONS V(BR)DSS IC = 100 mA V(BR)GSS IG = ±100 µA VGS(OFF) MINIMUM TYPICAL MAXIMUM UNITS 180 V VDS = 0 V ±20 V ID = 1.0 mA VDS = 10 V 0.5 VDSS = 180 V VGS = 0 V VDS(on) ID = 4.0 A VGS = 10 V |γfs| ID = 3.0 A VDS = 20 V CISS VGS = 5.0 V VDS = 0.0 V f = 1.0 MHz 350 COSS VGS = -5.0 V VDS = 50. V f = 1.0 MHz 220 CRSS VGS = VGD = - 50. V f = 1.0 MHz 15 IDSS POUT η VDD = 80 V 3.8 0.9 f = 28 MHz IDQ =100 mA 1.25 140 PIN = 5 W V 1.0 mA 6.0 V S pF W 80 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 3.0 % REV. C 1/1