40822 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 40822 is a N-Channel DualGate Depletion Type Transistor With Monolithic Gate Protection Diodes, used in RF,IF Amplifier and Mixer Applications up to 150 MHz. PACKAGE STYLE TO-72 MAXIMUM RATINGS ID 50 mA VD 24 V PDISS 330 mW @ TA = 25 OC TJ -65 OC to +175 OC TSTG -65 OC to +175 OC CHARACTERISTICS SYMBOL 1 = Drain 3 = Gate #1 2 = Gate #2 4 = Source, Case, and Substrate NONE O TA = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VG1S(OFF) VDS = 15 V VG2S = 4.0 V ID = 50 µA -2.0 -4.0 V VG2S(OFF) VDS = 15 V VG1S = 0 V ID = 50 µA -2.0 -4.0 V IG1SSF VG1S = 6.0 V VG2S = VDS = 0 V 50 µA IG1SSR VG1S = -6.0 V VG2S = VDS = 0 V 50 µA IG2SSF VG2S = 6.0 V VG1S = VDS = 0 V 50 µA IG2SSR VG2S = -6.0 V VG1S = VDS = 0 V 50 µA 30 mA IDS VDS = 15 V VG1S = 0 V VG2S = 4.0 V 5.0 15 V(BR)G1 IG1 = ±100 µA 9.0 V V(BR)G2 IG2 = ±100 µA 9.0 V 12000 µmho gfs VDS = 15 V f = 1.0 KHz VG2S = 4.0 V ID = 10 mA Crss Ciss Coss VDS = 15 V f = 1.0 MHz VG2S = 4.0 V ID = 10 mA GPS NF VDS = 15 V = 200 MHz VG2S = 4.0 V ID = 10 mA 0.005 6.5 2.0 f 19 24 2.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without 0.03 9.5 3.5 pF dB REV. A 1/1