AM1011-075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. PACKAGE STYLE .400 2L FLG (A) 2xB I • Internal Input/Output Matching Networks • PG = 9.2 dB min. at 75 W/1090 MHz • Omnigold™ Metalization System 5.4 A VCC 55 V TSTG 2xR H J K L N D IM M IN IM U M M AXIM U M inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 .193 / 4.90 G .490 / 12.45 H 175 W @ TC = 25 °C .396 / 10.06 .510 / 12.95 .100 / 2.54 I J .690 / 17.53 .710 / 18.03 -65 °C to +250 °C K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 -65 °C to +200 °C M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P θJC P M MAXIMUM RATINGS TJ F E G FEATURES: IC .040 x 45° C D PDISS A 4x .062 x 45° 0.86 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL BVCBO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 4.0 mA ICES VCE = 50 V hFE VCE = 5.0 V IC = 1.0 A PG ηC VCC = 50 V PIN = 9.0 W RBE = 10 Ω MINIMUM TYPICAL MAXIMUM V 65 V 3.5 V 6.0 10 f = 1090 MHz UNITS 65 9.2 48 mA --- 9.7 56 dB % Pulse Width = 32 µsec, Duty Cycle = 2% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1