AM80912-015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz • Omnigold™ Metalization System • 28 V Operations • Common Base configuration M IC VCC 32 V PDISS R TSTG -65 °C to +200 °C θJC 3.0 °C/W CHARACTERISTICS inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .286 / 7.26 .306 / 7.77 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM MINIMUM 50 W @ TC = 25 °C -65 °C to +250 °C P DIM I TJ L N MAXIMUM RATINGS 1.8 A J K BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1 mA ICES VCE = 28 V VBE = 0 V hFE VCE = 5.0 V IC = 500 mA PG ηC VCC = 28 V PIN = 2.3 W RBE = 10 Ω POUT = 15 W MINIMUM TYPICAL MAXIMUM 55 V 55 V 3.5 V 15 f = 960 - 1215 MHz UNITS 8.1 45 8.9 49 2.0 mA 150 --dB % Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 ms, Then off for 4.5125 ms Duty Cycle: Burst 49.2%, overall 20.8% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1