AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization • Emitter Ballasting ØD C E F G H L 0.9 A VCC 34 V PDISS 23 W @ TC = 25 °C TJ -65 °C to+250 °C TSTG -65 °C to+200 °C θJC 6.5 °C/W CHARACTERISTICS IC = 2.0 mA BVCER IC = 2.0 mA BVEBO IE = 1.0 mA ICES VCE = 30 V hFE VCE = 5 V Note: .020 / 0.51 .030 / 0.76 B .100 / 2.54 C .376 / 9.55 D .110 / 2.79 .130 / 3.30 E .395 / 10.03 .407 / 10.34 .396 / 10.06 F .193 / 4.90 G .450 / 11.43 .125 / 3.18 I .640 / 16.26 .660 / 16.76 K J .890 / 22.61 .910 / 23.11 K .395 / 10.03 .415 / 10.54 L .004 / 0.10 .007 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 N .230 / 5.84 P 1 = COLLECTOR TEST CONDITIONS BVCBO ηC PG inches / mm A MAXIMUM 2 & 4 = BASE 3 = EMITTER TC = 25 °C SYMBOL POUT inches / mm I J M IC MINIMUM H P MAXIMUM RATINGS DIM VCE = 30 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 50 V 50 V 3.5 V 2.0 IC = 200 mA PIN = 0.8 W 10 f = 2.7 to 3.1 GHz UNITS 3.0 27 5.7 mA --- 4.0 37 7.0 W % dB Pulse Width = 100 μS Duty Cycle = 10% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 1/1