AM82731-050 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-050 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC 4.0 A VCC 46 V PDISS 100 W @ TC ≤ 50 °C TJ -65 °C to+250 °C TSTG -65 °C to+200 °C θJC 2.0 °C/W CHARACTERISTICS TEST CONDITIONS BVCBO IC = 15 mA BVCER IC = 15 mA BVEBO IE = 2.0 mA ICES VCE = 40 V hFE VCE = 5 V ηC PG Note: 2 & 4 = BASE 3 = EMITTER TC = 25 °C SYMBOL POUT 1 = COLLECTOR VCC = 40 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 V 55 V 3.5 V 10 IC = 1.5 A PIN = 12.5 W 30 f = 2.7 to 3.1 GHz UNITS 50 30 6.0 mA --- 56 35 6.5 W % dB Pulse Width = 100 μS Duty Cycle = 10% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 1/1