ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks • Emitter Balasting • Omnigold™ Metalization System M R N MAXIMUM RATINGS IC 3.0 A VCC 25 V PDISS 55 W @ TC ≤ 50 °C -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 2.7 °C/W CHARACTERISTICS MAXIMUM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 .306 / 7.77 D .286 / 7.26 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R ORDER CODE: ASI10533 TC = 25 °C NONETEST CONDITIONS SYMBOL P DIM I TJ J K L BVCBO IC = 12 mA BVCER IC = 25 mA BVEBO IE = 2.5 mA ICBO VCB = 22 V hFE VCE = 5.0 V IC = 2.0 A PG ηC VCC = 22 V POUT = 20 W RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 30 f = 2.2 – 2.3 GHz UNITS 7.0 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 mA 300 --dB % REV. B 1/1