AVD090F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI AVD090F is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System E F G H I MAXIMUM RATINGS 1.0 A PEAK IC J K DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 C .245 / 6.22 MAXIMUM .255 / 6.48 VCB 55 V D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 PDISS 292 W @ 25 °C F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 H -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 0.6 °C/W CHARACTERISTICS I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10562 TC = 25 °C NONETEST CONDITIONS SYMBOL .285 / 7.24 G BVCBO IC = 10 mA BVCER IC = 25 mA BVEBO IE = 1.0 mA ICES VCB = 50 V hFE VCE = 5.0 V COB VCE = 50 V PG ηC VCC = 50 V PIN = 13 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 10 f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz UNITS 8.4 38 100 mA 200 --- 40 pF dB % Pulse with = 10 µS, Duty Cycle = 1.0 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCEAVD090F NOT FOUND. IMPEDANCE DATA PIN = 13 w VCE = 50 V FREQ ZIN (Ω) 960 MHz 2.5 + j13.0 1030 MHz 5.2 + j15.0 1090 MHz 16.3 + j15.0 1150 MHz 14.7 + j2.5 1215 MHz 7.6 + j0.5 ZCL (Ω) 4.6 – j5.5 5.0 – j5.5 4.8 – j5.5 4.7 – 7.0 4.7 – j5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2