BLW77 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW77 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 12 dB min. at 15-30 W/1.6-28 MHz • Common Emitter • Omnigold™ Metalization System MAXIMUM RATINGS IC 12 A VCB 70 V VCE 35 V PDISS 245 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.71 °C/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 35 V BVCES IC = 50 mA 70 V BVEBO IE = 20 mA 3.0 V ICES VE = 35 V hFE VCE = 5.0 V Cc VCB = 28 V GP d3 η VCE = 28 V IC = 7.0 A 15 f = 1.0 MHz IC(ZS) = 0.1 A PL = 15-130 W (PEP) f = 1.6-28 MHz 20 mA 80 --- 225 pF dB 12 -30 37.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. B 1/1