BLW85 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW85 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 9.5 dB Typ. at 40 W /175 MHz • ηC = 60% Typ. at 40 W /175 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS IC 9.0 A VCBO 36 V I GH 16 V VCEO 4.0 V VEBO DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E PDISS 105 W @ TC = 25 °C F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 TJ -65 °C to +200 °C H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 TSTG -65 °C to +150 °C θJC 1.6 °C/W CHARACTERISTICS SYMBOL .280 / 7.11 I J O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 50 mA 36 V BVCEO IC = 100 mA 16 V BVEBO IE = 25 mA 4.0 V ICES VCE = 18 V hFE VCE = 5.0 V Cob VCB = 15 V PG ηC VCC = 12.5 V IC = 4.0 A 10 f = 1.0 MHz POUT = 45 W f = 175 MHz 4.5 75 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 25.0 mA 80 --- 135 pF dB % REV. B 1/1