ASI CBSL15_07

CBSL15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL15 is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
PACKAGE STYLE .230 6L FLG
A
FEATURES:
.040x45°
B
C
2XØ.130
4X .025 R
• Internal Input Matching Network
• PG =8.0 dB at 15 W/960 MHz
• Omnigold™ Metalization System
.115
.430 D
E
F
.125
G
H
I
MAXIMUM RATINGS
J K
2.5 A
IC
VCBO
48 V
VCEO
30 V
VEBO
4.0 V
PDISS
29 W @ TC = 25 °C
-65 °C to +200 °C
TJ
TSTG
-65 °C to +150 °C
θJC
6.0 °C/W
CHARACTERISTICS
MINIMUM
inches / mm
inches / mm
A
.355 / 9.02
.365 / 9.27
B
.115 / 2.92
.125 / 3.18
C
.075 / 1.91
.085 / 2.16
D
.225 / 5.72
.235 / 5.97
E
.090 / 2.29
.110 / 2.79
F
.720 / 18.29
.730 / 18.54
G
.970 / 24.64
.980 / 24.89
H
.355 / 9.02
.365 / 9.27
I
.004 / 0.10
.006 / 0.15
J
.120 / 3.05
.130 / 3.30
K
.160 / 4.06
.180 / 4.57
L
.230 / 5.84
.260 / 6.60
MAXIMUM
ORDER CODE: ASI10581
TC = 25°C
NONETEST CONDITIONS
SYMBOL
DIM
L
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
48
V
BVCEO
IC = 20 mA
25
V
BVEBO
IE = 5 mA
3.5
ICBO
VCB = 24 V
hFE
VCE = 10 V
COB
VCB = 24 V
PG
ηC
VCC = 24 V
POUT = 15 W
IC = 100 mA
4.0
20
f = 1.0 MHz
ICQ = 75 mA
f = 960 MHz
8.0
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
---
V
1.0
mA
100
---
25
pF
dB
%
REV. B
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