HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD .112x45° A C B E E FEATURES: ØC • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System B D H I J G #8-32 UNC-2A F MAXIMUM RATINGS IC VCB VCE VEBO E 5.0 A 65 V 35 V 4.0 V MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 .100 / 2.54 PDISS 60 W @ TC = 25 °C H .090 / 2.29 I .155 / 3.94 TJ -65 °C to +200 °C J TSTG -65 °C to +150 °C θJC 2.9 °C/W CHARACTERISTICS .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10605 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 --- V BVCES IC = 200 mA 65 --- V BVCEO IC = 200 mA 35 --- V BVEBO IE = 10 mA 4.0 --- V ICES VCE = 30 V --- 10 mA ICBO VCE = 30 V --- 100 mA hFE VCE = 5.0 V 5.0 200 --- COB VCB = 30V --- 65 pF IC = 500 mA f = 1.0 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 HF30-28F ERROR! REFERENCE SOURCE NOT FOUND. GP ηC IMD3 VCE = 28 V POUT = 30 W (PEP) PIN = 0.48 W f = 30 MHz 718 60 -28 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % dBc REV. C 2/2