HXTR 4101 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The HXTR4101 is a Common Base Device Designed for Oscillator Applications up to 10 GHz. MAXIMUM RATINGS IC 70 mA VEBO 1.5 V VCEO 20 V TJ 300 °C TSTG -65 °C to 250 °C PT 900 mW @ TC = 25 °C DIMENSIONS IN MILLIMETERS 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICEO VCE = 15 V 500 nA ICBO VCB = 15 V 100 nA hFE VCE = 15 V IC = 15 mA 220 --- VCB = 15 V IC = 30mA IC = 30 mA IC = 30 mA IC = 30 mA Posc N/C PHASE NOISE TO CARRIER FROM THE CARRIER(SSB) f = 3.0 GHz f = 4.3 GHz f = 6.0 GHz f = 8.0 GHz 50 120 19 21.5 20.5 17 12 dBm -50 dBc/Hz @ 1.0 KHz f = 4.3 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1