ASI MLN1030SL_07

MLN1030SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SL is Designed for
Class A Linear Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L PILL
FEATURES:
A
• Class A Operation
• PG = 9.0 dB at 1.0 W/1.0 GHz
• Omnigold™ Metalization System
S
D
ØB
G
S
MAXIMUM RATINGS
IC
0.250 A
VCBO
40 V
VCEO
28 V
VEBO
3.5 V
PDISS
7.0 W @ TC = 25 °C
ØC
D
E
TSTG
-65 °C to +150 °C
θJC
20 ° C/W
O
CHARACTERISTICS
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
1.055 / 26.80
C
.275 / 6.99
.285 / 7.24
D
.004 / 0.10
.006 / 0.15
E
.050 / 1.27
.060 . 1.52
F
.118 / 3.00
.130 / 3.30
ORDER CODE: ASI10624
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM
B
-65 °C to +200 °C
TJ
DIM
F
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
40
V
BVCEO
IC = 1.0 mA
28
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 24 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
VCE = 20 V
POUT = 1.0 W
IC = 100 mA
20
f = 1.0 MHz
ICQ = 150 mA
f = 1.0 GHz
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.5
mA
120
---
5.0
pF
dB
REV. B
1/1