MRAL1720-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 4L FLG The ASI MRAL1720-5 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. FEATURES: • Diffused Ballast Resistors. • Internal Matching Network • Omnigold™ Metalization System MAXIMUM RATINGS IC 1.0 A (CONT) VCES 42 V VEBO 3.5 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 8.0 °C/W CHARACTERISTICS SYMBOL NONE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 40 mA 42 V BVEBO IE = 0.5 mA 3.5 V ICBO VCB = 22 V hFE VCE = 5.0 V Cob VCB = 28 V GPB ηc VCE = 22 V IC = 200 mA 10 f = 1.0 MHz Pout = 5.0 W f = 1.7 GHz & 2.0 GHz 1.0 mA 100 --- 8.0 pF 6.5 dB 40 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1