ASI MRF1035MB

MRF1035MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1035MB is Designed
for Class C, DME/TACAN Applications
up to 1090 MHz.
PACKAGE STYLE .280 4L PILL (A)
A
C
.100x45°
FEATURES:
• Internal Input Matching Network
• PG = 10 dB at 35 W/1090 MHz
• Omnigold™ Metalization System
C
B
B
B
ØG
E
MAXIMUM RATINGS
D
IC
2.0 A
VCBO
60 V
VCES
60 V
PDISS
35 W
E
PEAK
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
5.0 °C/W
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.195 / 4.95
.205 / 5.21
C
1.000 / 25.40
D
.004 / 0.10
.007 / 0.18
E
.050 / 1.27
.065 / 1.65
MAXIMUM
.145 / 3.68
F
CHARACTERISTICS
.275 / 6.99
G
.285 / 7.21
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
F
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
60
V
BVCES
IC = 20 mA
60
V
BVEBO
IE = 2.0 mA
4.0
V
ICBO
VCE = 50 V
hFE
VCE = 5.0 V
Cob
VCB = 50 V
PG
ηC
VCC = 50 V
IC = 500 mA
10
f = 1.0 MHz
POUT = 35 W
f = 1090 MHz
10
10
30
12.4
34
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
2.0
mA
100
---
15
pF
dB
%
REV. B
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