MRF1002MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL (A) The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° 1 FEATURES: C 3 B 4 • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System ØG 2 D MAXIMUM RATINGS E IC 250 mA VCEO 20 V VCBO 50 V PDISS 7.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 25 °C/W CHARACTERISTICS SYMBOL M A X IM U M D IM M IN IM U M in c h e s / m m in c h e s / m m A .0 9 5 / 2 .4 1 .1 0 5 / 2 .6 7 B .1 9 5 / 4 .9 5 .2 0 5 / 5 .2 1 C 1 .0 0 0 / 2 5 .4 0 D .0 0 4 / 0 .1 0 .0 0 7 / 0 .1 8 E .0 5 0 / 1 .2 7 .0 6 5 / 1 .6 5 .1 4 5 / 3 .6 8 F G F .2 7 5 / 6 .9 9 1 = COLLECTOR .2 8 5 / 7 .2 1 2 = EMITTER 3 & 4 = BASE TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 5.0 mA 50 V BVCES IC = 5.0 mA 50 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 35 V hFE VCE = 5.0 V COB VCB = 35 V PG ηC VCC = 35 V IC = 100 A 10 f = 1.0 MHz POUT = 2.0 W f = 1090 MHz 2.5 10 40 12 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 100 --- 5.0 pF dB % REV. A 1/1