MRF137 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz. MAXIMUM RATINGS ID 5.0 A VDSS 65 V PDISS 100 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.75 °C/W CHARACTERISTICS 1 = DRAIN 2 = GATE 3 & 4 = SOURCE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS ID = 10 mA VGS = 0 V 65 IDSS VDS = 28 V VGS = 0 V 4.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS(th) ID = 25 mA VDS = 10 V 1.0 3.0 6.0 V gfs ID = 500 mA VDS = 10 V 500 750 Ciss Coss Crss VDS = 28 V VGS = 0 V NF VDS = 28 V ID = 1.0 A f = 150 MHz Gps η VDD = 28 V IDQ = 25 mA Pout = 30 W f = 150 MHz ψ VDD = 28 V IDQ = 25 mA V mmhos 48 f = 1.0 MHz 45 pF 11 Pout = 30 W f = 150 MHz VSWR 30:1 @ ALL PHASE ANGLES 12 50 1.5 dB 16 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1