MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 32 A VDSS 65 V VGS ±40 V PDISS 500 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC O O O O O O 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE 0.35 C/W CHARACTERISTICS / EACH SIDE SYMBOL NONE O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V BVDSS ID = 100 mA IDSS VDS = 28 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS(th) ID = 100 mA VDS = 10 V 5.0 V VDS(on) ID = 10 A VGS = 10 V 1.5 V gfs ID = 5.0 A VDS = 10 V Ciss Coss Crss VDS = 28 V VGS = 0 V Gps push-pull VDD = 28 V IDQ = 500 mA η push-pull ψ push-pull 65 1.0 mhos 5.0 350 420 40 f = 1.0 MHz Pout = 300 W f = 175 MHz VDD = 28 V ID(max) = 21.4 A Pout = 300 W f = 175 MHz VDD = 28 V IDQ = 500 mA Pout = 300 W f = 175 MHz VSWR = 5:1 AT ALL PHASE ANGLES pF 12 dB 45 % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1