MRF185 RF POWER MOSFET DESCRIPTION: The ASI MRF185 is a Silicon Nchannel enhancement mode lateral MOSFET. PACKAGE STYLE .385X.850 4LFG FEATURES: • High Gain, Rigged Device • Omnigold™ Metalization System MAXIMUM RATINGS VDS 65 V VGS ±15 V PDISS 250 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.7 °C/W 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVDSS ID = 1.0 µA IDSS VDS = 28 V VGS = 0 V 1.0 µA IGSS VDS = 0 V VGS = 20 V 1.0 µA ∆VGS(Q) ID = 300 mA VDS = 26 V 0.15 0.3 V VDS(on) ID = 3.0 A VGS = 3 V 0.75 gfs ID = 3.0 A VDS = 10 V Coss Crss VDS = 28 V VGS = 0 V VDS = 28 V Pout = 85 W GPS ηD 65 UNITS V 1.6 f = 1.0 MHz f = 960 MHz 11 45 S 38 4.6 pF 14 53 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. V REV. A 1/1