MRF1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES INCLUDE: C B • High Common Emitter Power Gain • Output Power = 30 W A E ØC MAXIMUM RATINGS E B D IC 8.0 A VCE 16 V VCB 36 V PDISS H J G #8-32 UNC-2A TJ F E DIM MINIMUM inches / mm inches / mm 100 W @ TC = 25 °C A .220 / 5.59 .230 / 5.84 B .980 / 24.89 -65 °C to +200 °C C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 -65 °C to +150 °C TSTG θJC I 1.75 °C/W MAXIMUM H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 25 mA 36 V BVCEO IC = 25 mA 16 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 15 V GPE η VCC = 12.5 V Pout = 30 W ψ VCC = 15.5 V PIN = 2.0 dB Overdrive IC = 1.0 A 40 f = 1.0 MHz f = 175 MHz 10 60 5.0 mA 75 150 --- 75 100 pF 11 70 DB % No Degradation in Power Output Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1