MRF323 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280" 4L STUD The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. A 45° C E B E B FEATURES INCLUDE: C D • Gold Metalization • 30:1 VSWR J E I F G H K MAXIMUM RATINGS 2.2 A (CONT) 3.0 A (PEAK) IC 60 V VCB PDISS O 55 W @ TC = 25 C O TSTG -65 C to +150 C θJC 3.2 C/W SYMBOL MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 .130 / 3.30 G .245 / 6.22 H .255 / 6.48 .640 / 16.26 I O CHARACTERISTICS DIM F O #8-32 UNC J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 20 mA 60 V BVCEO IC = 20 mA 33 V BVEBO IE = 2.0 mA 4.0 V ICBO VCB = 30 V hFE IC = 1.0 A Cob VCB = 28 V GPE η VCC = 28 V ψ VCE = 5.0 V 20 f = 1.0 MHz Pout = 20 W Pout = 20 W VCC = 28 V VSWR = 30:1 ALL PHASE ANGLES f = 400 MHz f = 400 MHz 20 10 50 2.0 mA 80 --- 24 pF 11 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1