MSC1004M NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI MSC1004M is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. 2 1 3 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting MAXIMUM RATINGS IC 650 mA VCC 32 V PDISS 18 W @ TC ≤ 100 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 5.0 C/W O O O O O O 1 = COLLECTOR CHARACTERISTICS O TEST CONDITIONS BVCBO IC = 1.0 mA BVCER IC = 25 mA BVEBO IE = 1.0 mA ICES VCE = 28 V hFE VCE = 5.0 V VCE = 28 V 3 = BASE TC = 25 C SYMBOL PG POUT η 2 = EMITTER MINIMUM TYPICAL MAXIMUM UNITS 45 RBE = 10 Ω 45 V 3.5 V 1.0 IC = 200 mA PIN = 500 mW PULSE WIDTH = 10 µS 30 f = 1025 to 1150 MHz DUTY CYCLE = 1.0% 9.0 4.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA 300 dB W % REV. A 1/1