PTB20101 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .860 4L FLG DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES: • 175 W, 470-860 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 65 V PDISS 330 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θJC 0.53 °C/W CHARACTERISTICS SYMBOL 1,5 = COLLECTOR 3 = EMITTER 2,4 = BASE TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC POUT VCC = 28 V ICQ = 2x200 mA POUT = 110 W VCC = 28 V ICQ = 2x200 mA POUT = 175 W Ψ IC = 1.0 A 20 f = 1.0 MHz f = 860 MHz 100 --- 3.5 5 pF 8.5 55 175 11 58 dB % W f = 860 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5:1 --- REV. C 1/1