PTB32001X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32001X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B E • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization G L 250 mA VCBO 40 V PDISS 4.2 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG θJC J I K MAXIMUM MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 F .117 / 2.97 G 22 °C/W NP DIM E -65 °C to +200 °C CHARACTERISTICS F H M MAXIMUM RATINGS IC .060 x 45° CHAMFER C H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCES IC = 10 mA 40 V ICBO VCE = 24 V 10 µA IEBO VEB = 1.5 V 0.2 µA Ccb VCB = 24 V VEB = 1.5 V f = 1.0 MHz 2.2 pF Cce VCB = 24 V VEB = 1.5 V f = 1.0 MHz 0.3 pF POUT ηC GP VCC = 24 V f = 3.0 GHz 1.3 35 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. W % dB REV. B 1/1