SD1899 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1899 is a Common Base Device Designed for class C Applications. PACKAGE STYLE .250 2L FG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Diffused Ballast Resistors MAXIMUM RATINGS IC 3.8 A VCBO 50 V VCEO 25 V PDISS 66 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 6.5 °C/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = EMITTER 3 = BASE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 25 mA 50 V BVEBO IE = 10 mA 3.5 V ICEO VCE = 25 V hFE VCE = 8.0 V IC = 400 mA COB PG ηC 20 f = 1.0 MHz VCC = 28 V Pout = 30 W f = 1.6 – 1.7 GHz 60 25 mA 100 --pF 24 7.0 8.2 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1