TPV595 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV595 is Designed for Class AB PACKAGE STYLE .250 BAL FLG .020 x 45° Push Pull, Common Emitter from 470 to 860 MHz Applications. Collector - 2 places A B Ø .130 N O M . .05 0 x 45° E C N D Emitter connected to flange FEATURES: • Gold Metalization F I J MAXIMUM RATINGS B O 65 W @ TC = 25 C O -50 C to +200 C θJC 2.5 OC/W CHARACTERISTICS SYMBOL .065 / 1.65 .125 / 3.18 D .243 / 6.17 .255 / 6.48 E .630 / 16.00 .670 / 17.01 .092 / 2.34 G .555 / 14.10 .565 / 14.35 H .739 / 18.77 .750 / 19.05 I .315 / 8.00 .3 27 / 8.31 J .002 / 0.05 .006 / 0.15 K .055 / 1.40 .065 / 1.65 L .075 1.91 .0 95 / 2.41 .190 / 4.83 N .24 5 / 6 .22 .257 / 6.53 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 40 mA BVCER IC = 20 mA BVCBO IC = 20 mA ICBO VCB = 20 V BVEBO IE = 5 mA hFE VCE = 20 V COB VCB = 25 V PG VCE = 25 V F = 860 MHz Vision = -8 dB IMD3 .055 / 1.40 M O TSTG inches / m m .0 60 / 1 .52 F -50 OC to +200 OC TJ inches / m m C 45 V M M A X IM U M M IN IM U M A 2 x 2.6 A PDISS L K D IM VCB Base - 2 places H • Emitter Ballast Resistors • Internal Input Matching IC G MINIMUM TYPICAL MAXIMUM 25 RBE = 51 Ω 28 V 40 V 45 V 5.0 IC = 500 mA Sound = -7 dB PREF = 14 W mA 3.0 V 10 -20 IC = 2 x 900 mA UNITS 8.5 9.5 SB = -16 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB -47 dB REV. A 1/1