TPV596A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV596A is designed for MATV amplifiers up to 860 MHz and 500 mW band V TV transposer stages. PACKAGE STYLE .280 4L STUD FEATURES: A 45° • Difused emiter ballast resistors • PG = 12 dB at 0.5 W/ 860 MHz • Omnigold™ Metalization System C E B E B C D J MAXIMUM RATINGS E IC 0.7 A VCBO 45 V VCEO 24 V VEBO 3.5 V PDISS 8.75 W @ TC = 25 °C G H K -65 °C to +200 °C MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 θJC .245 / 6.22 CHARACTERISTICS J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TC = 25 °C NONETEST CONDITIONS SYMBOL .255 / 6.48 .640 / 16.26 I 20 °C/W .137 / 3.48 .130 / 3.30 G -65 °C to +200 °C MAXIMUM .572 / 14.53 H TSTG #8-32 UNC DIM F TJ I F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 20 mA 24 V BVEBO IE = 4.0 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG IMD1 VCE = 20 V POUT = 0.5 W IC = 100 mA 15 f = 1.0 MHz IE = 220 mA PIN = 50 mW f = 860 MHz 11.5 mA 120 --- 5.0 pF -58 dB dB 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 REV. A 1/1