ASI TVV100_07

TVV100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV100 is Designed for
Television Band III Applications up
to 225 MHz.
PACKAGE STYLE .400 8L FLG
C
D
FEATURES:
A
B
F U LL R
• Common Emitter
• PG = 11 dB at 100 W/225 MHz
• Omnigold™ Metalization System
G
O
F
E
.19 25
.125
K
4 x .0 60 R
H
I
J
N
MAXIMUM RATINGS
L M
16 A
IC
M IN IM UM
D IM
65 V
VCEO
33 V
PDISS
O
150 W @ TC = 25 C
O
O
O
O
TSTG
-65 C to +150 C
θJC
0.8 C/W
BVCBO
IC = 50 mA
BVCER
IC = 50 mA
BVCEO
F
.390 / 9.91
G
.735 / 18 .6 7
.765 / 19 .4 3
H
.645 / 16 .3 8
.655 / 16 .6 4
I
.895 / 22 .7 3
.905 / 22 .9 9
J
.420 / 10 .6 7
.430 / 10 .9 2
K
.003 / 0.08
.007 / 0.18
L
.120 / 3.05
.130 / 3.30
M
.159 / 4.04
.175 / 4.45
.395 / 10 .0 3
.405 / 10 .2 9
.280 / 7.11
O
ORDER CODE: ASI10662
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
.075 / 1.91
.130 / 3.30
.380 / 9.65
N
O
CHARACTERISTICS
.065 / 1.65
E
3.5 V
.125 / 3.18
.360 / 9.14
D
-65 C to +200 C
TJ
.115 / 2.92
B
C
VEBO
inche s / m m
.030 / 0.76
A
VCBO
M A X IM U M
inche s / m m
MINIMUM TYPICAL MAXIMUM
UNITS
65
V
60
V
IC = 50 mA
33
V
BVEBO
IE = 5.0 mA
3.5
V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
VCE = 28 V
POUT = 100 W
RBE = 15 Ω
IC = 500 mA
20
f = 1.0 MHz
IC = 2 X 100 mA
f = 225 MHz
---
60
11
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
150
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pF
dB
REV. A
1/1