ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD A 45° C E B E FEATURES: B • Common Emitter, Class-C 12.5 V • PG = 7.0 dB at 10 W/470 MHz • Omnigold™ Metalization System C D J E I F G MAXIMUM RATINGS IC 2.5 A VCBO 36 V VCEO 16 V VCES 36 V H K MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 4.0 V F PDISS 58 W @ TC = 25 °C H -65 °C to +150 °C θJC 3.0 °C/W CHARACTERISTICS .130 / 3.30 .245 / 6.22 .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10682 TC = 25 °C NONETEST CONDITIONS SYMBOL .137 / 3.48 .572 / 14.53 G -65 °C to +200 °C TSTG MAXIMUM DIM VEBO TJ #8-32 UNC MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 16 V BVCES IC = 25 mA 36 V BVEBO IE = 10 mA 4.0 V ICEO VCB = 15 V 2.0 mA ICES VCE = 10 V 3.0 mA hFE VCE = 5.0 V 150 --- IC = 1.0 A 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ULBM10 CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL Cob VCB = 12.5 V PG ηC VCC = 12.5 V PIN = 2.0 W MINIMUM TYPICAL MAXIMUM f = 1.0 MHz POUT = 10 W f = 470 MHz 26 7.0 UNITS pF dB % 60 IMPEDANCE DATA FREQ 470 MHz ZIN(Ω) 1.5 – j2.7 ZCL(Ω) 5.7 + j1.5 PIN = 2.0 W VCE = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2