VHB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System E E ØC B D H MAXIMUM RATINGS IC I J G #8-32 UNC-2A 2.0 A F E VCBO 36 V VCEO 18 V VCES 36 V VEBO PDISS 4.0 V 20 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 8.8 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10713 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 15 mA 18 V BVCES IC = 50 mA 36 V BVEBO IE = 2.5 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 250 mA 5.0 f = 1.0 MHz POUT = 10 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 45 pF dB % REV. C 1/2 VHB10-12S IMPEDANCE DATA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2