VHB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 E B MAXIMUM RATINGS C D IC 2.0 A VCBO 36 V VCEO 18 V VCES 36 V VEBO 4.0 V PDISS TJ E F G H I DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 20 W @ TC = 25 °C E F .004 / 0.10 .006 / 0.15 -65 °C to +200 °C G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 TSTG -65 °C to +150 °C θJC 8.8 °C/W CHARACTERISTICS .280 / 7.11 I J ORDER CODE: ASI10712 TC = 25 °C NONETEST CONDITIONS SYMBOL .385 / 9.78 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 15 mA 18 V BVCES IC = 50 mA 36 V BVEBO IE = 2.5 mA 4.0 V ICBO VCB = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V IC = 250 mA 5.0 f = 1.0 MHz POUT = 10 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 45 pF dB % REV. B 1/1