AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package The AT-42070 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 70 mil Package AT-42070 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation [2,3] mW 600 Tj Junction Temperature °C200 TSTG Storage Temperature °C -65 to 200 Thermal Resistance [2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 6.7 mW/°C for Tc > 110°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Min. Typ. |S 21E| 2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.5 f = 4.0 GHz 11.5 5.5 P1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dBm21.0 f= 4.0 GHz20.5 f = 2.0 GHz dB 15.0 f = 4.0 GHz 10.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB f = 4.0 GHz f = 2.0 GHz dB f = 4.0 GHz Max. 1.9 3.0 14.0 10.5 8.0 f T Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz — 30 150270 µA 0.2 µA2.0 pF 0.28 Note: 1. For this test, the emitter is grounded. Units AT-42070 Typical Performance, TA = 25°C 24 2.0 GHz 12 2.0 GHz 20 4.0 GHz P1dB 16 12 0 10 20 30 40 8 4 50 G1dB 0 10 4.0 GHz 20 IC (mA) 4V P1dB 12 24 35 21 30 18 GAIN (dB) MSG 20 MAG |S21E|2 10 0 GA 15 12 4 9 3 NFO 3 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 0 0.5 1.0 2.0 6V 4V G1dB 12 0 10 20 30 40 50 IC (mA) 6 5 10 V 14 10 50 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 15 40 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 25 30 2 1 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. NFO (dB) 0 GAIN (dB) 6V 16 16 G1 dB (dB) 4.0 GHz 4 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB 0.1 .70 -4928.526.56 154 -36.0 0.5 .69 -13721.5 11.85 105 -29.6 1.0 .69 -165 16.0 6.34 85 -27.2 1.5 .68 -179 12.7 4.33 72 -27.4 2.0 .69 169 10.3 3.26 62 -25.6 2.5 .69 164 8.52.64 56 -25.4 3.0 .70 157 6.92.22 48 -23.8 3.5 .70 151 5.6 1.91 39 -22.4 4.0 .69 144 4.5 1.68 30 -21.4 4.5 .68 137 3.5 1.5022 -20.4 5.0 .68 1282.7 1.37 14 -19.4 5.5 .68 1172.0 1.26 5 -18.3 6.0 .70 107 1.2 1.15 -3 -17.6 S12 S22 Mag. Ang. Mag. .016 77 .91 .033 34 .50 .04429 .40 .043 37 .38 .052 42 .37 .054 46 .37 .065 52 .39 .076 51 .41 .085 55 .43 .096 49 .46 .107 50 .48 .121 45 .48 .132 44 .48 Ang. -18 -41 -44 -48 -54 -55 -63 -71 -77 -83 -87 -91 -98 S12 S22 Mag. Ang. Mag. .010 50 .77 .019 46 .34 .033 51 .28 .040 59 .27 .053 59 .27 .065 65 .28 .072 65 .28 .086 59 .30 .097 60 .33 .109 54 .36 .126 50 .38 .138 46 .39 .152 40 .38 Ang. -29 -42 -41 -44 -51 -53 -62 -72 -80 -85 -90 -94 -102 AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB 0.1 .52 -95 33.4 46.52 139 -40.0 0.5 .66 -16323.1 14.33 95 -34.4 1.0 .67 179 17.3 7.36 80 -29.6 1.5 .67 169 13.9 4.97 69 -28.0 2.0 .68 160 11.4 3.74 60 -27.3 2.5 .69 157 9.6 3.04 55 -23.8 3.0 .69 151 8.12.55 47 -22.8 3.5 .69 145 6.82.20 39 -21.4 4.0 .68 139 5.7 1.9320 -20.2 4.5 .67 132 4.7 1.7422 -19.3 5.0 .67 123 4.0 1.59 13 -18.0 5.5 .67 113 3.2 1.46 5 -17.2 6.0 .69 1032.5 1.34 -4 -16.4 A model for this device is available in the DEVICE MODELS section. AT-42070 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.5 1.9 3.0 Γopt Mag .05 .06 .10 .23 .45 Ang 15 75 126 172 -145 RN/50 0.13 0.13 0.12 0.11 0.17 Ordering Information Part Number AT-42070 No. of Devices 100 70 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE COLLECTOR 3 1 2 .004 ± .002 .10 ± .05 EMITTER .070 1.78 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2654EN AV02-1218EN May 5, 2008