UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS(on) = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 36nC) • Low Crss ( Typ. 35pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • Improved dv/dt capability • RoHS compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 33 -Continuous (TC = 100oC) - Pulsed Ratings 250 A 21 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 33 A EAR Repetitive Avalanche Energy (Note 1) 24.6 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns 132 A (Note 2) 918 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 245 W 1.96 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.51 RθCS Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FDA33N25 Rev. A Units o C/W 40 1 www.fairchildsemi.com FDA33N25 N-Channel MOSFET September 2007 Device Marking FDA33N25 Device FDA33N25 Package TO-3PN Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 250 - - V ID = 250µA, Referenced to 25oC - 0.34 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 250V, VGS = 0V - - 1 VDS = 200V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 16.5A - 0.088 0.094 Ω gFS Forward Transconductance VDS = 20V, ID = 16.5A - 24.2 - S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 200V, ID = 33A VGS = 10V (Note 4, 5) - 1655 2200 pF - 315 420 pF - 35 55 pF - 36 46.8 nC - 10.8 - nC - 16 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 125V, ID = 33A RG = 25Ω (Note 4, 5) - 33 76 ns - 142 293 ns - 77 165 ns - 68 146 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 33 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 132 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 33A - - 1.4 V trr Reverse Recovery Time - 256 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 33A dIF/dt = 100A/µs - 2.3 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA33N25 Rev. A 2 www.fairchildsemi.com FDA33N25 N-Channel MOSFET Package Marking and Ordering Information FDA33N25 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 200 100 ID,Drain Current[A] ID,Drain Current[A] 100 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 0.1 0.01 2. TC = 25 C 0.1 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 10 500 0.20 0.15 VGS = 10V VGS = 20V 0.10 100 o *Note: TJ = 25 C 0 20 40 60 ID, Drain Current [A] 80 100 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 2000 Ciss o 25 C 10 *Notes: 1. VGS = 0V 2. 250µs Pulse Test 0.8 1.6 VSD, Body Diode Forward Voltage [V] 2.4 Figure 6. Gate Charge Characteristics 10 *Note: 1. VGS = 0V 2. f = 1MHz 1000 VGS, Gate-Source Voltage [V] Coss o 150 C 1 0.0 4000 Capacitances [pF] 6 8 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.25 0.05 4 VDS = 50V VDS = 125V VDS = 200V 8 6 4 2 Crss 0 0.1 FDA33N25 Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 30 3 *Note: ID = 33A 0 10 20 30 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 16.5A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 35 400 100 20µs 30 100µs ID, Drain Current [A] ID, Drain Current [A] 2.5 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 20 15 10 o 1. TC = 25 C 5 o 0.01 25 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 400 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 0.02 0.01 0.01 t2 *Notes: Single pulse 1E-3 -5 10 FDA33N25 Rev. A PDM 0.05 o 1. ZθJC(t) = 0.51 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDA33N25 N-Channel MOSFET Typical Performance Characteristics (Continued) FDA33N25 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA33N25 Rev. A 5 www.fairchildsemi.com FDA33N25 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA33N25 Rev. A 6 www.fairchildsemi.com FDA33N25 N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA33N25 Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDA33N25 Rev. A 8 www.fairchildsemi.com FDA33N25 N-Channel MOSFET TRADEMARKS