Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2114 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1A (Min.) continuous load current. • • • • The AP2114 features low power consumption. • The AP2114 is available in 1.2V, 1.8V, 2.5V and 3.3V regulator output, and available in excellent output accuracy 1.5%, it is also available in an excellent load regulation and line regulation performance. • • • The AP2114 is available in standard packages of SOT-223, TO-252-2 (1), TO-252-2 (3), TO-263-3, SOIC-8 and PSOP-8. • • • • • AP2114 Output Voltage Accuracy: ±1.5% Output Current: 1A (Min.) Fold-back Short Current Protection: 50mA Low Dropout Voltage (3.3V): 450mV (Typ.) @IOUT=1A Stable with 4.7µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Excellent Line Regulation: 0.02%/V (Typ.), 0.1%/V (Max.) @ IOUT=30mA Excellent Load Regulation: 0.2% @IOUT=0A to 1A Low Quiescent Current: 60µA (1.2V/1.8V/ 2.5V) Low Output Noise: 30µVRMS PSRR: 68dB @ Freq=1KHz (1.2V/1.8V) OTSD Protection Operating Temperature Range: -40°C to 85°C ESD: MM 400V, HBM 4000V Applications • • • LCD Monitor LCD TV STB SOT-223 TO-263-3 TO-252-2 (1) TO-252-2 (3) SOIC-8 PSOP-8 Figure 1. Package Types of AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Pin Configuration H Package (SOT-223) S Package (TO-263-3) D Package (TO-252-2 (1)) (TO-252-2 (3)) M Package (SOIC-8) MP Package (PSOP-8) Figure 2. Pin Configuration of AP2114 (Top View) Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Pin Descriptions Pin Number SOT-223, TO-263-3, TO-252-2 (1) / (3) 1 2 3 SOIC-8/PSOP-8 Pin Name 1, 3, 5, 6, 7, 2 4 8 GND VOUT VIN EN Function Ground Regulated Output Input Voltage Pin Chip Enable, H – normal work, L – shutdown output Functional Block Diagram EN (8) 3 (4) Shutdown Logic VIN Foldback Current Limit Thermal Shutdown 2 (2) VOUT 3m VREF GND 1 (1, 3, 5, 6, 7) A (B) A: SOT-223, TO-263-3, TO-252-2 (1)/(3) B: SOIC-8, PSOP-8 Figure 3. Functional Block Diagram of AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Ordering Information AP2114 G1: Green Circuit Type Package H: SOT-223 D: TO-252-2 (1)/TO-252-2 (3) S: TO-263-3 M: SOIC-8 MP: PSOP-8 Package Temperature Range SOT-223 -40 to 85°C TO-252-2 (1)/ TO-252-2 (3) -40 to 85°C TO-263-3 -40 to 85°C SOIC-8 -40 to 85°C PSOP-8 -40 to 85°C Part Number AP2114H-1.2TRG1 AP2114H-1.8TRG1 AP2114H-2.5TRG1 AP2114H-3.3TRG1 AP2114D-1.2TRG1 AP2114D-1.8TRG1 AP2114D-2.5TRG1 AP2114D-3.3TRG1 AP2114S-1.2TRG1 AP2114S-1.8TRG1 AP2114S-2.5TRG1 AP2114S-3.3TRG1 AP2114M-1.2TRG1 AP2114M-1.8TRG1 AP2114M-2.5TRG1 AP2114M-3.3TRG1 AP2114MP-1.2TRG1 AP2114MP-1.8TRG1 AP2114MP-2.5TRG1 AP2114MP-3.3TRG1 TR: Tape & Reel 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V Marking ID GH12C GH12D GH14C GH12E AP2114D-1.2G1 AP2114D-1.8G1 AP2114D-2.5G1 AP2114D-3.3G1 AP2114S-1.2G1 AP2114S-1.8G1 AP2114S-2.5G1 AP2114S-3.3G1 2114M-1.2G1 2114M-1.8G1 2114M-2.5G1 2114M-3.3G1 2114MP-1.2G1 2114MP-1.8G1 2114MP-2.5G1 2114MP-3.3G1 Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VIN 6.5 V Power Supply Voltage Operating Junction Temperature Range Storage Temperature Range TJ 150 ºC TSTG -65 to 150 ºC Lead Temperature (Soldering, 10sec) TLEAD 260 ºC ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Range Oct. 2010 Temperature Symbol Min Max Unit VIN 2.5 6.0 V TA -40 85 °C Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Electrical Characteristics AP2114-1.2 Electrical Characteristics (Note 2) (VIN=2.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Output Voltage VOUT Input Voltage Test Conditions VIN =2.5V, 1mA ≤ IOUT ≤ 30mA Min Typ Max Unit VOUT ×98.5% 1.2 VOUT ×101.5% V 6.0 V VIN Maximum Output Current IOUT(MAX) VIN=2.5V, VOUT=1.182V to 1.218V 1 A Load Regulation △VOUT/VOUT △IOUT VIN=2.5V, 1mA ≤ IOUT ≤1A 0.2 1 %/A Line Regulation △VOUT/VOUT △VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V Dropout Voltage VDROP IOUT=1.0A 1200 1300 mV 60 75 µA Quiescent Current Power Ratio IQ Supply Rejection Output Voltage Temperature Coefficient Short Current Limit PSRR △VOUT/VOUT △T ISHORT VIN=2.5V, IOUT=0mA Ripple 1Vp-p VIN=2.5V, IOUT=100mA f=100Hz 68 f=1KHz 68 dB IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C VOUT=0V 50 mA 30 µVRMS RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No Load) VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time TS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load Set EN pin at Low 1.5 V 0.4 0.01 µA 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 25 θJC 1.0 °C SOIC-8 PSOP-8 SOT-223 TO-252-2 (1) / TO-252-2 (3) TO-263-3 74.6 43.7 50.9 35 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Electrical Characteristics (Continued) AP2114-1.8 Electrical Characteristics (Note 2) (VIN=2.8V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Output Voltage VOUT Maximum Output Current △VOUT/VOUT △IOUT △VOUT/VOUT △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Power Ratio Supply IOUT(MAX) IQ Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T Test Conditions VIN =2.8V, 1mA ≤ IOUT ≤ 30mA VIN=2.8V, VOUT=1.773V to 1.827V Min Typ Max Unit VOUT ×98.5% 1.8 VOUT ×101.5% V 1.0 A VIN=2.8V, 1mA ≤ IOUT ≤1A 0.2 1.0 %/A 2.8V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V IOUT=1.0A 500 700 mV VIN=2.8V, IOUT=0mA 60 75 µA Ripple 1Vp-p VIN=2.8V, IOUT=100mA f=100Hz 68 f=1KHz 68 dB IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time TS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load Set EN pin at Low 1.5 V 0.4 0.01 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 25 θJC µA 1.0 °C SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Electrical Characteristics (Continued) AP2114-2.5 Electrical Characteristics (Note 2) (VIN=3.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Output Voltage VOUT Maximum Output Current IOUT(MAX) Test Conditions VIN =3.5V, 1mA ≤ IOUT ≤ 30mA VIN=3.5V, VOUT=2.463V to 2.537V Min Typ Max Unit VOUT ×98.5% 2.5 VOUT ×101.5% V 1.0 A Load Regulation △VOUT/VOUT △IOUT Vout=2.5V, VIN=Vout+1V 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT △VIN 3.5V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V Dropout Voltage VDROP IOUT =1A 450 750 mV Quiescent Current IQ VIN=3.5V, IOUT=0mA 60 80 µA Ripple 1Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 f=1KHz 65 Power Ratio Supply Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T dB IOUT=30mA ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time TS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load Set EN pin at Low 1.5 0.01 µA 1.0 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V 0.4 °C SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Electrical Characteristics (Continued) AP2114-3.3 Electrical Characteristics (Note 2) (VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Output Voltage VOUT Maximum Output Current △VOUT/VOUT △IOUT △VOUT/VOUT △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Power Ratio Supply IOUT(MAX) IQ Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T Test Conditions VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VIN =4.3V, VOUT=3.25V to 3.35V Min Typ Max Unit VOUT ×98.5% 3.3 VOUT ×101.5% V 1.0 A VIN=4.3V, 1mA ≤ IOUT ≤1A 0.2 1.0 %/A 4.3V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V IOUT=1A 450 750 mV VIN=4.3V, IOUT=0mA 65 90 µA Ripple 1Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 f=1KHz 65 dB IOUT=30mA ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time EN Pull Down Resistor VOUT Discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) TS No Load RPD RDCHG Set EN pin at Low 1.5 V 0.4 0.01 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 25 θJC µA 1.0 °C SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics 400 500 VIN=2.5V AP2114_1.2V 450 400 O TA=25 C 350 Ground Current (µA) Ground Current (µA) 350 O TA=-40 C O TA=85 C 300 250 200 150 300 AP2114_1.8V VIN=2.8V CIN=4.7µF COUT=4.7µF 250 200 150 O TA=-40 C 100 O TA=25 C 100 O TA=85 C 50 50 0 0.0 0.2 0.4 0.6 0.8 0 0.0 1.0 0.2 Output Current (A) Figure 4. Ground Current vs. Output Current 450.0 CIN=4.7µF 250 200 150 O TA=-40 C 100 0.4 0.6 300.0 250.0 200.0 O 150.0 TA=-40 C O 100.0 TA=25 C O 50.0 TA=85 C TA=85 C 0.2 350.0 O TA=25 C 50 0.8 0.0 0.0 1.0 Output Current (A) O 0.2 0.4 0.6 0.8 1.0 Output Current (A) Figure 6. Ground Current vs. Output Current Oct. 2010 1.0 AP2114_3.3V VIN=4.3V 400.0 COUT=4.7µF 0 0.0 0.8 500.0 AP2114_2.5V VIN=3.5V Ground Current (µA) Ground Current (µA) 300 0.6 Figure 5. Ground Current vs. Output Current 400 350 0.4 Output Current (A) Figure 7. Ground Current vs. Output Current Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 100 100 AP2114_1.2V VIN=2.5V 90 Quiescent Current (µA) Quiescent Current (µA) 90 IOUT=0mA 80 70 60 50 80 70 60 50 AP2114_1.8V VIN=2.8V 40 No Load CIN=4.7µF 30 20 40 30 -40 COUT=4.7µF 10 -20 0 20 40 60 0 -40 80 -20 0 20 80 100 120 Figure 9. Quiescent Current vs. Temperature 100 AP2114_2.5V VIN=3.5V AP2114_3.3V VIN=4.3V 90 No Load CIN=4.7µF Quiescent Current (µA) Quiescent Current (µA) Figure 8. Quiescent Current vs. Temperature COUT=4.7µF IOUT=0mA 80 70 60 50 40 -20 0 20 40 60 80 100 30 -40 120 -20 0 20 40 60 80 O Temperature ( C) O Temperature ( C) Figure 10. Quiescent Current vs. Temperature Oct. 2010 60 O Temperature ( C) 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 -40 40 Temperature ( C) O Figure 11. Quiescent Current vs. Temperature Rev. 1. 3 BCD Semiconductor Manufacturing Limited 11 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 110 100 AP2114_1.2V IOUT=0mA 80 Quiescent Current (µA) Quiescent Current (µA) 90 70 60 50 O 40 TA= -40 C 30 TA= 25 C O O TA= 85 C 20 10 2 3 4 5 100 AP2114_1.8V IOUT=0mA 90 TA=25 C o o TA=-40 C 80 o TA=85 C 70 60 50 40 30 2.5 6 3.0 3.5 Figure 12. Quiescent Current vs. Input Voltage 5.5 6.0 110 AP2114_2.5V IOUT=0mA 100 Quiescent Current (µA) TA=25 C 90 o TA=-40 C 80 AP2114_3.3V IOUT=0mA 100 o Quiescent Current (µA) 5.0 Figure 13. Quiescent Current vs. Input Voltage 110 o TA=85 C 70 60 90 80 70 60 50 50 40 40 O TA= -40 C O 30 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TA= 25 C O TA= 85 C 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 14. Quiescent Current vs. Input Voltage Oct. 2010 4.5 Input Voltage (V) Input Voltage (V) 30 2.5 4.0 Figure 15. Quiescent Current vs. Input Voltage Rev. 1. 3 BCD Semiconductor Manufacturing Limited 12 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) AP2114_1.2V 1.88 1.212 VIN=2.5V AP2114_1.8V VIN=2.8V 1.86 CIN=4.7µF 1.84 COUT=4.7µF IOUT=10mA 1.208 IOUT=100mA 1.204 IOUT=500mA IOUT=1000mA 1.200 1.196 Output Voltage (V) Output Voltage (V) 1.90 1.216 1.82 1.80 1.78 IOUT=10mA 1.76 IOUT=100mA 1.188 1.74 IOUT=500mA 1.184 1.72 1.192 1.180 -40 -20 0 20 40 60 IOUT=1000mA 1.70-40 80 -20 0 20 40 60 80 O Temperature ( C) O Temperature ( C) Figure 16. Output Voltage vs. Temperature Figure 17. Output Voltage vs. Temperature 3.34 2.52 3.33 Output Voltage (V) Output Voltage (V) 3.35 2.54 2.50 AP2114_2.5V VIN=3.5V 2.48 CIN=4.7µF 2.46 COUT=4.7µF IOUT=10mA 2.44 IOUT=100mA IOUT=500mA 2.42 -20 0 20 40 60 3.31 3.30 3.29 3.28 IOUT=10mA 3.27 IOUT=100mA 3.25 -40 80 IOUT=500mA IOUT=1000mA -20 0 20 40 60 80 O Temperature ( C) O Temperature ( C) Figure 18. Output Voltage vs. Temperature Oct. 2010 3.32 3.26 IOUT=1000mA 2.40 -40 AP2114_3.3V VIN=4.3V Figure 19. Output Voltage vs. Temperature Rev. 1. 3 BCD Semiconductor Manufacturing Limited 13 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 2.0 1.6 AP2114_1.2V 1.8 1.4 1.4 Output Voltage (V) Output Voltage (V) 1.6 1.2 1.0 O 0.8 TA=-40 C 0.6 TA=25 C O O TA=85 C 0.4 0.2 1.2 1 2 3 4 AP2114_1.8V o TA=-40 C 0.8 TA=25 C o o TA=85 C 0.6 CIN=4.7µF CIN=4.7µF 0.4 COUT=4.7µF COUT=4.7µF 0.2 IOUT=10mA IOUT=10mA 0.0 1.0 5 0.0 0.5 6 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Input Voltage (V) Figure 20. Output Voltage vs. Input Voltage Figure 21. Output Voltage vs. Input Voltage 6.0 4.0 AP2114_3.3V 2.5 Output Voltage (V) 3.5 Output Voltage (V) 2.0 AP2114_2.5V CIN=4.7µF 1.5 COUT=4.7µF IOUT=10mA 1.0 O TA=-40 C 2.5 2.0 O TA=-40 C O 1.5 TA=25 C 1.0 TA=85 C CIN=4.7µF 0.5 COUT=4.7µF O O TA=25 C 0.5 3.0 O TA=85 C IOUT=10mA 0.0 1 2 3 4 5 6 0.0 0.5 7 Input Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Figure 22. Output Voltage vs. Input Voltage Oct. 2010 1.0 Figure 23. Output Voltage vs. Input Voltage Rev. 1. 3 BCD Semiconductor Manufacturing Limited 14 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 1.210 1.3 AP2114_1.2V AP2114_1.2V 1.2 1.200 1.1 1.195 1.0 Output Voltage (V) Output Voltage (V) 1.205 1.190 1.185 1.180 VIN=2.5V 1.175 O TA=-40 C 1.170 0.7 VIN=2.5V 0.6 0.5 0.4 O 0.3 TA=85 C 1.160 0.8 O TA=25 C 1.165 0.9 VIN=3.3V O TA=25 C CIN=4.7µF 0.2 COUT=4.7µF 0.1 1.155 1.150 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 0.2 0.4 Output Current (A) Figure 24. Output Voltage vs. Output Current CIN=4.7µF COUT=4.7µF O TA=-40 C 0.75 O TA=25 C 0.50 CIN=4.7µF COUT=4.7µF 1.5 O TA=-40 C 1.0 O TA=25 C O 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TA=85 C 0.5 0.0 0.0 1.6 Output Current (A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Figure 26. Output Voltage vs. Output Current Oct. 2010 1.4 AP2114_2.5V VIN=3.5V 2.0 O TA=85 C 0.25 0.00 0.0 1.2 2.5 AP2114_1.8V VIN=2.8V Output Voltage (V) Output Voltage (V) 1.00 1.0 3.0 1.75 1.25 0.8 Figure 25. Output Voltage vs. Output Current 2.00 1.50 0.6 Output Current (A) Figure 27. Output Voltage vs. Output Current Rev. 1. 3 BCD Semiconductor Manufacturing Limited 15 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 3.35 AP2114_3.3V 3.5 AP2114_3.3V 3.34 Output Voltage (V) Output Voltage (V) 3.0 2.5 2.0 1.5 VIN=4.3V VIN=5V 1.0 CIN=4.7µF 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TA=25 C 3.32 O TA=85 C 3.31 3.30 3.27 0.0 1.6 0.2 0.4 0.6 0.8 1.0 Output Current (A) Output Current (A) Figure 28. Output Voltage vs. Output Current Figure 29. Output Voltage vs. Output Current 0.60 0.7 0.55 AP2114_1.8V VIN=2.8V 0.6 0.50 CIN=4.7µF 0.5 Dropout Voltage (V) Dropout Voltage (V) O 3.28 COUT=4.7µF 0.0 0.0 O TA=-40 C 3.29 O TA=25 C 0.5 VIN=4.3V 3.33 COUT=4.7µF 0.4 0.3 O TA=-40 C O 0.2 TA=25 C 0.0 TA=85 C 0.0 0.2 0.4 0.6 0.8 0.35 0.30 0.25 0.20 O TA=-40 C O 0.10 TA=25 C 0.05 TA=85 C 0.00 0.0 1.0 O 0.2 0.4 0.6 0.8 1.0 Output Current (A) Output Current (A) Figure 30. Dropout Voltage vs. Output Current Oct. 2010 0.40 CIN=4.7µF COUT=4.7µF 0.15 O 0.1 0.45 AP2114_2.5V VIN=3.5V Figure 31. Dropout Voltage vs. Output Current Rev. 1. 3 BCD Semiconductor Manufacturing Limited 16 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 1.8 0.55 CIN=4.7µF 0.50 COUT=4.7µF 0.45 AP2114_3.3V O O TA=-40 C 0.40 O TA=25 C 0.35 O TA=85 C 0.30 AP2114_1.2V 1.6 Max. Output Current (A) Dropout Voltage (V) 0.60 0.25 0.20 0.15 0.10 TA=25 C 1.4 CIN=4.7µF COUT=4.7µF 1.2 1.0 0.8 0.6 0.4 0.2 0.05 0.00 0.0 0.2 0.4 0.6 0.8 0.0 2.0 1.0 2.5 3.0 4.0 4.5 5.0 5.5 Figure 32. Dropout Voltage vs. Output Current Figure 33. Max. Output Current vs. Input Voltage 2.0 2.0 AP2114_2.5V CIN=4.7µF 1.8 1.6 COUT=4.7µF 1.6 COUT=4.7µF 1.4 VOUT=1.8X(1+1.5%) 1.4 VOUT=2.5X(1+1.5%) 1.8 Max. Output Current (A) AP2114_1.8V CIN=4.7µF 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 34. Max. Output Current vs. Input Voltage Oct. 2010 6.0 Input Voltage (V) Output Current (A) Max. Output Current (A) 3.5 Figure 35. Max. Output Current vs. Input Voltage Rev. 1. 3 BCD Semiconductor Manufacturing Limited 17 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 0.10 1.8 AP2114_3.3V 1.4 COUT=4.7µF 1.2 AP2114_1.2V VIN=2.5V 0.09 CIN=4.7µF Output Short Current (A) Max. Output Current (A) 1.6 O TA=25 C 1.0 0.8 0.6 0.08 0.07 0.06 0.05 0.4 0.04 0.2 0.0 4.0 4.5 5.0 5.5 0.03 -40 6.0 -20 0 20 40 60 80 O Temperature ( C) Input Voltage (V) Figure 36. Max. Output Current vs. Input Voltage Figure 37. Output Short Current vs. Temperature 70 60 Output Short Current (mA) Output Short Current (mA) 70 50 40 AP2114_1.8V VIN=2.8V 30 CIN=4.7µF 60 50 40 AP2114_2.5V VIN=3.5V 30 CIN=4.7µF COUT=4.7µF 20 -40 -20 0 20 40 60 80 100 COUT=4.7µF 20 -40 120 0 20 40 60 80 100 120 O O Temperature ( C) Temperature ( C) Figure 38. Output Short Current vs. Temperature Oct. 2010 -20 Figure 39. Output Short Current vs. Temperature Rev. 1. 3 BCD Semiconductor Manufacturing Limited 18 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 0.10 80 AP2114_3.3V VIN=4.3V AP2114_1.2V 70 60 0.08 PSRR (dB) Output Short Current (A) 0.09 0.07 0.06 50 40 O TA=25 C 30 0.05 CIN=1µF 20 0.04 COUT=4.7µF IOUT=10mA 10 Ripple=1Vp-p 0.03 -40 -20 0 20 40 60 0 80 100 O Figure 40. Output Short Current vs. Temperature 80 AP2114_2.5V AP2114_1.8V 70 70 60 PSRR (dB) PSRR (dB) 60 50 40 O 10 100k Figure 41. PSRR vs. Frequency 80 20 10k Frequency (Hz) Temperature ( C) 30 1k TA=25 C 50 40 O TA=25 C 30 CIN=4.7µF COUT=4.7µF CIN=4.7µF COUT=4.7µF 20 IOUT=10mA 10 Ripple=1Vp-p 0 100 1k 10k 0 100k Frequency (Hz) Ripple=1Vp-p 100 1k 10k 100k Frequency (Hz) Figure 42. PSRR vs. Frequency Oct. 2010 IOUT=10mA Figure 43. PSRR vs. Frequency Rev. 1. 3 BCD Semiconductor Manufacturing Limited 19 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Performance Characteristics (Continued) 80 AP2114_3.3V O TA=25 C 70 CIN=1µF COUT=4.7µF 60 PSRR (dB) Ripple=1Vp-p 50 40 IOUT 500mA/div VOUTAC 50mV/div 30 20 IOUT=10mA IOUT=100mA 10 0 100 1k 10k 100k Frequency (Hz) Figure 44. PSRR vs. Frequency Oct. 2010 Figure 45. Load Transient Rev. 1. 3 BCD Semiconductor Manufacturing Limited 20 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Typical Application Figure 46. Typical Application of AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 21 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions Rev. 1. 3 Unit: mm(inch) 3.700(0.146) 3.300(0.130) 6.700(0.264) Oct. 2010 7.300(0.287) SOT-223 BCD Semiconductor Manufacturing Limited 22 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions (Continued) TO-252-2 (1) Oct. 2010 Rev. 1. 3 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 23 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions (Continued) Unit: mm(inch) 6.500(0.256) 6.700(0.264) 0.720(0.028) 0.900(0.035) 0.470(0.019) 0.600(0.024) 0.720(0.028) 0.850(0.033) 0.900(0.035) 1.100(0.043) 0 8 2.900REF 9.800(0.386) 10.40(0.409) 5 9 3 7 1.400(0.055) 1.700(0.067) 2.286(0.090) BSC 4.700REF 0.600(0.024) 1.000(0.039) 0.150(0.006) 0.750(0.030) 1.29±0.1 5.250REF 5.130(0.202) 5.460(0.215) 1.800REF 6.000(0.236) 6.200(0.244) 0.900(0.035) 1.250(0.049) TO-252-2 (3) 5 9 0 8 2.200(0.087) 2.380(0.094) Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 24 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions (Continued) TO-263-3 4.070(0.160) 4.820(0.190) Unit: mm(inch) 3° 9.650(0.380) 10.290(0.405) 8.840(0.348) 70° 1.150(0.045) 1.390(0.055) 1.270(0.050) 1.390(0.055) 7.420(0.292) 14.760(0.581) 15.740(0.620) 1.150(0.045) 1.390(0.055) 3° 0.510(0.020) 0.990(0.039) 2.540(0.100) 2.540(0.100) 7.980(0.314) 2° 8° 0.380(0.015) 2.540(0.100) 0° 6° Oct. 2010 2.640(0.104) 2.700(0.106) 0.360(0.014) 0.400(0.016) 7° 2.200(0.087) 5.600(0.220) 0.020(0.001) 0.250(0.010) 2.390(0.094) 2.690(0.106) 8.640(0.340) 9.650(0.380) 7° Rev. 1. 3 2.540(0.100) BCD Semiconductor Manufacturing Limited 25 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions (Continued) Unit: mm(inch) R0.150(0.006) SOIC-8 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 26 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Mechanical Dimensions (Continued) Unit: mm(inch) 3.202(0.126) 3.402(0.134) PSOP-8 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 27 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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