Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L General Description Features The APT13003L series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. · · · High Switching Speed High Collector-Emitter Voltage Low Cost Applications The APT13003L series is available in TO-92 package. · · Battery Chargers for Mobile Phone Power Supply for DVD/STB TO-92 (Ammo Packing) Figure 1. Package Types of APT13003L Pin Configuration Z Package (TO-92 (Ammo Package)) 3 Base 2 Collector 1 Emitter Figure 2. Pin Configurations of APT13003L (Top View) Aug. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L Ordering Information APT13003 G1: Green Circuit Type TR: Ammo Package Z: TO-92 L: APT13003L Package TO-92 Part Number Marking ID APT13003LZTR-G1 Packing Type 13003LZ-G1 Ammo BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage VCES 700 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V IC 0.8 A ICM 1.6 A IB 0.4 A Base Peak Current IBM 0.8 A Power Dissipation, TA=25oC PTOT 0.8 W 150 oC Collector Current Collector Peak Current Base Current Operating Junction Temperature Storage Temperature Range -55 to 150 o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L Thermal Characteristics Parameter Thermal Resistance (Junction-to-Ambient) Symbol Value Unit θJA 156.25 oC/W Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Symbol Conditions ICEV VCE=700V Collector-Emitter Sustaining Voltage (IB=0) VCEO (sus) IC=0.1mA Collector-Emitter Saturation Voltage VCE(sat) DC Current Gain hFE Min Typ Max Unit 10 μA 450 V 0.5 IC=200mA, IB=40mA IC=100mA, VCE=10V 15 23 40 IC=300mA, VCE=10V 6 15 30 Aug. 2011 Rev 1. 1 V BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L Typical Performance Characteristics 10 125 100 Power Derating Factor(%) Collector Current (A) 1 0.1 0.01 0.001 75 50 25 0 0.0001 1 10 100 1000 0 25 75 100 125 150 175 200 0 Collector-Emitter Clamp Voltage (V) Figure 4. Power Derating Curve Figure 3. Safe Operating Areas 0.6 35 IB=50mA 0.5 0.4 25 IB=30mA IB=25mA 0.3 IB=20mA IB=15mA 0.2 IB=10mA 20 15 10 0 IB=5mA 0.1 VCE=5V 30 IB=45mA IB=40mA IB=35mA DC Current Gain Cllector Current Ic (A) 50 Case Temperature Tc( C) TJ=25 C 5 0 TJ=125 C 0.0 0 2 4 6 8 10 12 Collector-Emitter Voltage (V) 0 0.01 0.1 1 Collector Current(A) Figure 5. Static Characterstics Figure 6. DC Current Gain Aug. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L Typical Performance Characteristics (Continued) 1.0 100 HFE=5 HFE=5 Base-Emitter Voltage (V) Collector-Emitter Voltage (V) 0.9 10 1 0.1 0 TJ=25 C 0.8 0.7 0 TJ=25 C 0.6 0 TJ=125 C 0 TJ=125 C 0.01 0.05 0.1 0.5 0.05 1 0.1 1 Collector Current (A) Collector Current (A) Figure 7. Collector-Emitter Saturation Region Figure 8. Base-Emitter Saturation Voltage Aug. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L Mechanical Dimensions (Continuted) TO-92 (Ammo Packing) Unit: mm(inch) 1. 100(0. 043) 3. 430(0.135) MIN 1.270(0.050) Typ 2.500(0.098) 4.000 (0.157 ) 0. 000(0.000) 0. 380(0.015) Φ1. 600(0. 063) MAX 14.500(0.571) 12.500(0.492) 0.320(0. 013) 0. 510(0. 020) 3.800(0.150) 3.300(0.130) 1. 400(0.055) 4.700(0.185) 4.300(0.169) 4.400(0.173) 4.800 (0.189 ) 13.000(0. 512) 15.000 (0.591 ) 0.380(0.015) 0.550(0.022 ) 2.540(0.100) Typ Aug. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 6 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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