CO M PL IA NT TISP61089HDM *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR TISP61089HDM Overvoltage Protector Intended for Use in GR-1089-CORE Issue 3 Compliant Line Cards 8-SOIC (210 mil) Package (Top View) 1 8 K1 (Tip) 2 7 A (Ground) NC 3 6 A (Ground) K2 4 5 K2 (Ring) K1 (Tip) Dual, Voltage-Programmable SLIC Protector – Low 15 mA max. Gate Triggering Current – Supports Battery Voltages Down to -155 V – High 150 mA min. Holding Current (Gate) G (Ring) Rated for GR-1089-CORE Issue 3 Conditions GR-1089-CORE Test Impulse Waveshape IPPSM Section Test # A 2/10 4.6.7 4.6.8 4 1 500 10/1000 4.6.7 188.8.131.52 1, 3 1 100 Meets GR-1089-CORE First Level A.C. Power Fault Conditions GR-1089-CORE Section 4.6.10 Test # I RMS Power Fault Duration A s 1 0.33 900 2 0.17 900 3 1 1 4 1 1 6 0.5 30 7 2.2 2 8 3 1.1 9 5 0.4 NC - No internal connection Terminal typical application names shown in parenthesis MD-8SOIC(210)-001-b Device Symbol K1 K1 A G A K2 K2 The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal. SD-TISP6-001-a GR-1089-CORE Second Level A.C. Power Fault Conditions are Detailed in the ‘Applications Information’ Section ............................................... UL Recognized Component How To Order Device Package Carrier TISP61089HDM 8-SOIC (210 mil) Embossed Tape Reeled Order As TISP61089HDMR-S Marking Code Standard Quantity 61089H 2000 Description The TISP61089HDM is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61089HDM limits voltages that exceed the SLIC supply rail voltage. The TISP61089HDM parameters are specified to allow equipment compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45. The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -155 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089HDM Overvoltage Protector Description (Continued) Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides the high holding current of TISP61089HDM SCR prevents d.c. latchup. The TISP61089HDM is designed to be used with a pair of Bourns® B1250T fuses for overcurrent protection. Level 2 power fault compliance requires the series overcurrent element to become open-circuit or high impedance. For equipment compliant to ITU-T recommendations K.20, K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series resistor value of 6.5 Ω is recommended. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Symbol Value Unit Repetitive peak off-state voltage, VGK = 0 Rating VDRM -170 V Repetitive peak gate-cathode voltage, VKA = 0 VGKRM -167 V IPPSM 100 150 100 500 500 A ITSM 7.7 6.1 4.8 3.7 2.8 2.6 A TJ -40 to +150 °C Tstg -65 to +150 °C Non-repetitive peak impulse current (see Notes 1, 2 and 3) 10/1000 µs (Telcordia GR-1089-CORE, Issue 3) 5/310 µs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 µs) 10/360 µs (Telcordia GR-1089-CORE, Issue 3) 1.2/50 µs voltage waveshape (Telcordia GR-1089-CORE, Issue 3), including 3 Ω non-inductive resistor 2/10 µs (Telcordia GR-1089-CORE, Issue 3) Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 4) 0.5 s 1s 2s 5s 30 s 900 s Junction temperature Storage temperature range NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3. 3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7 (Anode) are connected together. 4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter ID Off-state current Test Conditions -5 -50 µA 12 12 20 V IF = 5 A, tW = 200 µs 3 V 10/1000 µs, IF = 100 A, VGG = -100 V 5/310 µs, IF = 150 A, VGG = -100 V 2/10 µs, IF = 200 A, VGG = -100 V (see Note 5) 6 7 10 V VD = VDRM, VGK = 0 10/1000 µs, ITM = 100 A, VGG = -100 V VGK(BO) Gate-cathode impulse breakover voltage 5/310 µs, ITM = 150 A, VGG = -100 V 2/10 µs, ITM = 200 A, VGG = -100 V (see Note 5) VF VFRM Forward voltage Peak forward recovery voltage Min Typ Max Unit TA = 25 °C TA = 85 °C MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089HDM Overvoltage Protector Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued) Parameter IH Test Conditions Holding current Gate reverse current IGKS Min Typ Max Unit IT = -1 A, di/dt = 1 A/ms, VGG = -100 V VGG = VGK = VGKRM, VKA = 0 -150 mA TA = 25 °C TA = 85 °C -5 -50 µA mA IGT Gate trigger current IT = -3 A, tp(g) ≥ 20 µs, VGG = -100 V 15 VGT Gate-cathode trigger voltage IT = -3 A, tp(g) ≥ 20 µs, VGG = -100 V 2.5 V CKA Cathode-anode off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -50 V, IG = 0 40 pF NOTE: 5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise. Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter RθJA NOTE Junction to ambient thermal resistance Test Conditions Min Typ Max Unit 55 °C/W EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, PTOT = 4 W (See Note 6) 6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. Parameter Measurement Information +i Quadrant I IPPSM Forward Conduction Characteristic IFSM (= |ITSM|) IF VF V GK(BO) V GG -v VD ID I(BO) IH IS V(BO) +v VS VT IT ITSM Quadrant III IPPSM Switching Characteristic -i Figure 1. Voltage-Current Characteristic Unless Otherwise Noted, All Voltages are Referenced to the Anode MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PM-TISP6-001-a TISP61089HDM Overvoltage Protector Thermal Information ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI-TISP6-001-a 15 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4 x V GEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-7 PCB, TA = 25 °C SIMULTANEOUS OPERATION OF R AND T TERMINALS. 10 9 8 7 6 5 4 3 2 1.5 1 0.1 1 10 100 1000 t - Current Duration - s Figure 2. MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089HDM Overvoltage Protector APPLICATIONS INFORMATION SLIC Fuse SLIC PROTECTOR Tip F1a B1250T Ring F1b B1250T TISP 61089HDM 10 kΩ 1.0 Ω C1 220 nF D1 D2 -V BAT AI-TISP6-001-b Figure 3. Line Protection with TISP61089HDM Figure 3 illustrates how a typical SLIC protection circuit may look for a TISP61089HDM and a pair of Bourns® Telefuse™ overcurrent protectors. This is a generic circuit that is designed to withstand both lightning surge testing and AC power fault testing. As applications can differ, it is recommended you contact your Bourns representative for detailed applications guidance on your specific design. MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089HDM Overvoltage Protector APPLICATIONS INFORMATION (Continued) TYPICAL TIME TO OPEN vs CURRENT PEAK AC vs CURRENT DURATION 30 7 6 5 4 20 TISP61089HDM ITSM 3 RMS Current - A Peak 50 Hz / 60 Hz Current - A 10 2 1.5 1 0.7 0.6 0.5 0.4 AI-TISP6-003-a 60 50 40 AI-TISP6-002-a 15 10 8 7 6 5 4 3 GR-1089 First Level Tests TISP61089HDM B1250T 2 0.3 0.2 0.15 0.1 1 10 100 t - Current Duration - s Figure 4. 1000 1 0.01 0.1 1 10 100 1000 t - Current Duration - s Figure 5. GR-1089-CORE Issue A.C. Power Fault testing has been comprehended in the design of the TISP61089HDM. For compliance, circuit designs must pass both First Level and Second Level A.C. Power Fault testing. First Level Power Fault testing requires that the equipment shall not be damaged and continues to operate correctly without disruption to other parts of the system. In laboratory tests it has been shown that the circuit shown in Figure 3 can pass these tests without damage. Figure 4 shows the TISP61089HDM I TSM rating to be above the level of GR-1089-CORE First Level tests. Second Level Power Fault testing may result in the equipment becoming non-operational, but any component failure should not allow the equipment to become a hazard. The system should not burn, fragment, or become an electrical safety hazard. The test data in Figure 5 illustrates that the TISP61089HDM and the B1250T are current coordinated, as the fuse interrupt time is shorter than the time it takes to damage the TISP61089HDM package for a given current. MAY 2004 – REVISED AUGUST 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Bourns Sales Offices Region Phone Fax The Americas: +1-951-781-5500 +1-951-781-5700 Europe: +41-41-7685555 +41-41-7685510 Asia-Pacific: +886-2-25624117 +886-2-25624116 Region Phone Fax The Americas: +1-951-781-5500 +1-951-781-5700 Europe: +41-41-7685555 +41-41-7685510 Asia-Pacific: +886-2-25624117 +886-2-25624116 Technical Assistance www.bourns.com Bourns ® products are available through an extensive network of manufacturer’s representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area. Reliable Electronic Solutions “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.