CEK01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D S G TO-92(Ammopack) ABSOLUTE MAXIMUM RATINGS D S TO-92(Bulk) S TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 600 Units V Gate-Source Voltage VGS ±30 V Drain Current-Continuous IDa 0.4 A Drain Current-Pulsed IDM 1.6 A PD 3.1 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJL 40 C/W Parameter b Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Lead Rev 1. 2009.Nov. http://www.cetsemi.com Details are subject to change without notice . 1 CEK01N6G Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 20 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 9.3 Ω Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 0.4A Forward Transconductance gFS b VDS = 15V, ID = 0.4A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 7.3 Dynamic Characteristics c VDS = 25V, VGS = 0V, f = 1.0 MHz 10 S 210 pF 55 pF 25 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 0.5A, VGS = 10V, RGEN = 10Ω 19 25 ns 10 13 ns 31 40 ns Turn-Off Fall Time tf 37 48 ns Total Gate Charge Qg 6 12 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 1A, VGS = 10V 0.7 nC 3.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.4A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 0.4 A 1.5 V 6 CEK01N6G 1.2 0.6 0.4 VGS=4V 0.2 4 8 12 16 20 0.2 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Transfer Characteristics Ciss 80 Coss 40 Crss 0 5 10 15 20 25 3.0 2.5 ID=0.4A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C VGS, Gate-to-Source Voltage (V) 120 1.2 0.4 0.0 24 160 1.3 0.6 TJ=125 C 200 0 1.0 VDS, Drain-to-Source Voltage (V) 240 C, Capacitance (pF) ID, Drain Current (A) 0.8 0 0.0 VTH, Normalized Gate-Source Threshold Voltage 25 C VGS=10,8,7V 1.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID, Drain Current (A) 1.2 -25 0 25 50 75 100 125 150 VGS=0V 10 0 10 -1 10 -2 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=480V ID=1A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEK01N6G 6 4 2 0 0 1 2 3 4 5 4 RDS(ON)Limit 10 10 10 6 1 0 10ms 100ms 1s DC -1 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3