CEM6056 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter D D D D 8 7 6 5 1 S 2 S 3 S 4 G TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 60 Units V Gate-Source Voltage VGS ±20 V ID 15 A IDM 60 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2010.May http://www.cetsemi.com CEM6056 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 7.5 mΩ Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 15A 2 6.2 Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 2.6A VDS = 25V, VGS = 0V, f = 1.0 MHz 10 S 3205 pF 390 pF 215 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 15A, VGS = 10V, RGEN = 3.6Ω 27 54 ns 14 28 ns 60 120 ns Turn-Off Fall Time tf 17 34 ns Total Gate Charge Qg 75 97.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 48V, ID =15A, VGS = 10V 12 nC 28 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 2 A 1.2 V CEM6056 15 20 25 C 12 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V VGS=4V 9 6 3 0 0 2 4 6 0 0 1 -55 C 2 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1800 1200 Coss Crss 600 0 5 10 15 20 25 2.2 1.9 ID=15A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 8 2400 1.2 8 VDS, Drain-to-Source Voltage (V) 3000 1.3 12 VGS=3V 3600 0 16 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=48V ID=15A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM6056 6 4 2 0 0 15 30 45 60 75 10 2 10 1 10 0 RDS(ON)Limit 10ms 100ms 1s DC 10 -1 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2