CHENMKO 2SC4774PT

CHENMKO ENTERPRISE CO.,LTD
2SC4774PT
SURFACE MOUNT
High frequency amplifier Transistor
VOLTAGE 6 Volts
CURRENT 50 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
SC-70/SOT-323
* Surface mount package. (SC-70/SOT-323)
* Low saturation voltage VCE(sat)=0.3V(max.)
* Low cob. Cob=1.0pF(Typ.)
(2)
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
(3)
(1)
1.3±0.1
CONSTRUCTION
0.65
2.0±0.2
0.65
0.3±0.1
* NPN Silicon Transistor
* Epitaxial planner type
1.25±0.1
MARKING
* UW
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
C (3)
CIRCUIT
2.0~2.45
(1) B
E (2)
SC-70/SOT-323
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
12
Collector - Emitter Voltage
Open Base
VCEO
-
6
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
3
Volts
IC
-
50
mAmps
PTOT
-
250
mW
Storage Temperature
TSTG
-55
+150
o
C
Junction Temperature
TJ
-
+150
o
C
+150
o
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Operating Ambient Temperature
TAMB
-55
MAX.
UNITS
Volts
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2004-11
RATING CHARACTERISTICS ( 2SC4774PT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=10V
CONDITION
ICBO
-
-
0.5
uA
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
-
-
0.5
uA
DC Current Gain
VCE/IC=5V/5mA
hFE
270
-
560
Collector-Emitter Saturation Voltage
IC=10mA; IB=1mA
VCEsat
-
-
0.3
Volts
Output-on resistance
IB=3mA; VI=100mVrms
f=500KHz
Ron
-
2
-
Ω
Output Collector Capacitance
IE=ie=0; VCB=10V;
f=1MHz
Cob
-
1
1.7
pF
Transition Frequency
IC=-10mA; VCE=5V;
f=200MHz
fT
300
800
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( 2SC4774PT )
zElectrical characteristic curves
25mA
20mA
6
15mA
4
10mA
5mA
2
1
2
3
IB=0µA
4
5
40
0.2mA
30
0.1mA
20
10
0
0
0.1
0.2
0.3
IB=0mA
0.4
0.5
VCE=5V
−25°C
25°C
50
0.3mA
125°C
mA
A
0.5 0.4m
COLLECTOR CURRENT : IC (mA)
8
Ta=25°C
1.0
mA
30mA
0
0
50
35mA
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics ( )
characteristics (
)
characteristics
2000
Ta=25°C
VCE=5V
500
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10 20
50
GAIN BANDWIDTH PRODUCT : fT (MHz)
1000
1000
DC CURRENT TRANSFER RATIO : hFE
COLLECTER SATURATION VOLTAGE : VCE(sat) (mA)
RATING CHARACTERISTIC CURVES ( 2SC4774PT )
Ta=25°C
IC/IB=10
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10 20
500
200
100
50
20
0.1 0.2
50
5
2
1
0.5
0.2
0.1 0.2
0.5
1
2
5
10 20
50
10 20
10
5
2
1
0.5
20
10
5
2
0.2
0.1 0.2
0.5
1
2
5
10 20
50
1
0.1 0.2
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASS CURRENT : IB (mA)
Fig.7 Collector output capacitance
Fig.8 Back capacitance voltage
Fig.9 Output-on resistance vs.
vs. voltage
50
Ta=25°C
f=500kHz
υi=100mVrms
RL=1kΩ
Ta=25°C
f=1MHz
ON RESISTANE : Ron (Ω)
OUTPUT CAPACITANCE : Cob (pF)
FEEDBACK CAPACITIANCE : Cre (pF)
10
5
50
20
Ta=25°C
f=1MHz
2
collector current
voltage vs. collector current
20
1
Fig.6 Gain bandwidth product vs.
Fig.5 Collector-emitter saturation
Fig.4 DC current gain vs. collector current
0.5
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Ta=25°C
VCE=5V
1000
base current
50