CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor NPN:VOLTAGE 60 Volts PNP:VOLTAGE 15 Volts CHEMZ8PT CURRENT 150 mAmpere CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) SOT-563 * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Both the 2SC2412K & 2SA2018 in one package. * NPN / PNP Silicon Transistor (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 0.15~0.3 (4) (3) MARKING 1.1~1.3 * Z8 0.5~0.6 0.09~0.18 CIRCUIT 3 1 4 6 1.5~1.7 SOT-563 Dimensions in millimeters 2SC2412K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 60 Volts Collector - Emitter Voltage Open Base VCEO - 50 Volts Emitter - Base Voltage Open Collector VEBO - 7 Volts IC - 150 mAmps Peak Collector Current ICM - 150 mAmps Peak Base Current IBM - 15 mAmps PTOT - 150 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-07 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − -15 V Collector-emitter voltage - -12 V Emitter-base voltage - -6 V - -500 - -1000 - 150 VCBO Collector-base voltage VCEO VEBO IC mA DC Output current NOTE.1 ICP Pc power dissipation TSTG Storage temperature -55 +150 TJ Junction temperature - 150 mW O C O C Note 1. Single Pulse Pw=1ms 2SC2412K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector-base breakdown voltage PARAMETERS IC=50uA CONDITION BVCBO 60 - - Volts Collector-emitter breakdown voltage IC=1mA BVCEO 50 - - Volts Emitter-base breakdown voltage IE=50uA BVEBO 7 - - Volts Collector Cut-off Current IE=0; VCB=60V ICBO - - 0.1 Emitter Cut-off Current IC=0; VEB=7V ICEO - - 0.1 DC Current Gain VCE=6V IC=1mA hFE 120 - 560 Collector-Emitter Saturation Voltage IC=50mA; IB=5mA VCEsat - - 0.4 Volts Output Collector Capacitance IE=ie=0; VCB=12V; f=1MHz Cob - 2 3.5 pF Transition Frequency IC=2mA; VCE=12V; f=100MHz fT - 180 - MHz uA 2SA2018 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BVCEO Collector-emitter breakdown voltage IC=-1mA - -12 V BVCBO Collector-base breakdown voltage IC=-10uA -15 - - V BVEBO Emitter-base breakdown voltage IE=-10uA -6 - ICBO Collector cut-off current VCB=-15V - - -100 nA IEBO Emitter cut-off current VEB=-6V - - -100 nA hFE DC current gain VCE=-2V,IC=-10mA 270 - IC=-200mA,IB=-10mA - -100 -250 mV VCB=-10V,IE=0mA,f=1MHZ - 6.5 - pF VCE=-2V,IE=10mA,f=100MHZ - 260 - MHz VCE(sat) Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency V 680 − RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SC2412K Typical Electrical Characteristics 100 COLLECTOR CURRENT : IC (mA) VCE=6V 20 10 2 1 25 ΟC 55 OC Ta=100 OC 5 0.5 0.2 mA 0.45 A 0.40m A m 35 0. 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0 VCE=5V Ta=100OC 25OC 200 -55OC 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 2 5 10 20 50 EMITTER CURRENT : IE (mA) 100 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 100 1 0.5 1 2 5 10 20 50 100 100 50 20 10 0.2 0.5 1 2 5 EMITTER CURRENT : IE (mA) 2 5 10 20 50 100 200 0.5 IC/IB=10 0.2 0.1 Ta=100OC 25OC -55OC 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Ta=25OC f=32MHZ VCB=6V 200 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.8 Base-collector time constant vs. emitter current 200 50 10 0.2 2.0 COLLECTOR CURRENT : IC (mA) Ta=25O VCE=6V 100 IB=0A 1.6 VCE=5V 3V 1V 200 20 0.2 Fig.7 Gain bandwidth product vs. emitter current 50 0.5 1.2 0.5 COLLECTOR CURRENT : IC (mA) 500 0.8 Ta=25OC 0.05mA Fig. 5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 0.4 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 DC current gain vs. collector current (2) TRANSITION FREQUENCY : fT (MHz) 0.50mA 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE Ta=25OC 0 0.1 0 Fig.3 DC current gain vs. collector current (1) Grounded emitter output characteristics DC CURRENT GAIN : hFE 50 COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 10 RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SA2018 Typical Electrical Characteristics Fig.2 DC current gain vs. collector current Fig.1 Ground emitter propagation characteristics 1000 VCE=2V pulsed O O DC CURRENT GAIN : hFE 100 Ta=25 C O O Ta=-40 C 10 1 O O -40 C 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 1000 O Ta=25 C pulsed 100 O Ta=125 C O Ta=25 C 10 O Ta=-40 C 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) 10 100 1000 COLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) VCE=2V pulsed Ta=125 C 25 C Ta=125 C COLLECTOR CURRENT : IC(mA) 1000 Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 O Ta=125O C Ta=25 C O Ta=-40 C 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 RATING CHARACTERISTIC CURVES ( CHEMZ8PT ) 2SA2018 Typical Electrical Characteristics 1000 EMITTER INPUT CAPACITANCE : Cib (pF) 1000 IC/IB=20 pulsed Ta=-40OOC Ta=25 C O Ta=125 C 100 10 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.6 Gain bandwidth product vs. collector current TRANSITION FREQUENCY : fT(MHZ) BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.5 Base-emitter saturation voltage vs. collector current Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHOZ Ta=25 C 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) VCE=2V O Ta=25 C pulsed 100 10 1 1 10 100 EMITTER CURRENT : IE(mA) 1000