MBR10150CT Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • 10 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop Low Leakage Current • Power Schottky Barrier Rectifier 150Volts Maximum Ratings • • • • TO-220AB Operating J unction Temperature : 150°C Storage Temperature: - 50°C to +150°C Per d iode Thermal Resistance 4°C/W Junction to Case Total Thermal Resistance 2.4°C/W Junction to Case Catalog Number MBR 10150 CT Maximum Recurrent Peak Reverse Voltage 150 V Maximum RMS Voltage 105V B L M C Maximum DC Blocking Voltage 150 V D A K PIN E F G I J N H H Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR10150CT Maximum Reverse Current At Rated DC Blocking Voltage IF(AV) 10 A TC = 155 °C IFSM 120A 8.3ms half sine PIN 1 VF .92V VF .75V IR 50 µ A 7m A IFM = 5A TJ = 25°C I FM = 5A TJ = 125°C TJ = 25°C TJ = 125°C PIN 2 CASE PIN 3 A B C D E F G H I J K L M N INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 * Pulse Test: Pulse Width380µsec, Duty Cycle 2% www.cnelectr.com MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 MBR10150CT Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 5.0 δ = 0.2 δ = 0.5 δ = 0.1 4.5 4.0 δ = 0.05 3.5 δ=1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp δ=tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) 5 4 Rth(j-a)=15°C/W 3 2 T 1 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) IM(A) 1.0 80 70 0.8 60 50 Tc=50°C 0.6 Tc=75°C 0.4 δ = 0.5 40 30 20 δ = 0.2 δ = 0.1 Tc=125°C IM 10 Single pulse t(s) t δ=0.5 0 1E-3 1E-2 T 0.2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) 0.0 1E-3 tp(s) δ=tp/T 1E-2 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(µA) C(pF) 1E+5 200 F=1MHz Tj=25°C Tj=175°C 1E+4 100 Tj=150°C 1E+3 Tj=125°C 1E+2 50 Tj=75°C 1E+1 1E+0 Tj=25°C 20 1E-1 1E-2 VR(V) 0 25 50 75 VR(V) 100 125 150 10 1 2 5 10 www.cnelectr.com 20 50 100 200 MBR10150CT Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) (STPS10150CG only). IFM(A) Rth(j-a) (°C/W) 100.0 80 70 Tj=125°C Typical values 10.0 60 Tj=125°C 50 Tj=25°C 40 30 1.0 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 S(cm²) 0 2 4 6 8 10 www.cnelectr.com 12 14 16 18 20 Marking 1. Marking on the semiconductor ( laser marking or UV ink marking ) Logo MBR10150CT Type Name Terminal sign www.cnelectr.com