COMCHIP 1N4001-G_12

General Purpose Silicon Rectifiers
1N4001-G Thru. 1N4007-G
Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Features
DO-41
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability.
1.0(25.40) Min.
O
-High soldering temperature guarantee: 260 C/10
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension.
0.205(5.20)
0.160(4.20)
Mechanical data
0.107(2.70)
0.080(2.00)
-Case: transfer molded plastic, DO-41
1.0(25.40) Min.
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD202E, method 208C
0.034(0.90)
0.028(0.70)
-Mounting position: Any
Dimensions in inches and (millimeter)
-Weight: 0.012ounce, 0.33 grams
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
1N4001
-G
1N4002
-G
1N4003
-G
1N 4004
-G
1N4005
-G
1N4006
-G
1N4007
-G
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
O
0.375"(9.5mm) Lead Length @TA=55 C
I(AV)
1.0
A
Peak Forward Surge Current,
8.3mS single half sine-wave superimposed on
rated load (JEDEC method)
IFSM
30
A
Maximum Instantaneous Forward Voltage @1.0A
VF
1.1
V
Parameter
Maximum DC Reverse Current at Rated
DC Blocking voltage per element
TA=25 OC
TA=100 OC
Maximum Full Load Reverse Current,full cycle
average 0.375”(9.5mm)lead length at TL=75 OC
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Ttemperature Range
IR
5.0
μA
50
IR(AV)
30
CJ
15
μA
PF
O
C/W
RθJA
60
TJ
-55 ~ +150
O
C
-55 ~ +150
O
C
TSTG
NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm2copper pads to each terminal.
REV:A
Page 1
QW-BG013
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( 1N4001 -G Thru. 1N4007-G )
Fig.1 Typical Forward Current
Derating Curve
Fig.2 Maximum. Non-Repetitive Peak
Forward Surge Current
35
ΙFSM, Peak Forward Surge Current (A)
I(AV), Average Forward Current (A)
1.2
1.0
0.8
0.6
0.4
Single phase
Half wave, 60Hz
Resistive or
inductive load
0.2
30
25
20
15
10
5
0
0
0
25
50
75
100
125
TA, Ambient Temperature (
150
O
175
1
0.1
Pulse width=300μs.
1% duty cycle
O
TJ=25 C
0.01
1.0
1.2
1.4
1.6
1.8
10
20
50
100
Fig.4 Typical Reverse Characteristics
IR, Instantaneous Reverse Current (mA)
1.0
0.8
5
Number of Cycles at 60Hz
10
0.6
2
C)
Fig.3 Typical Instantaneous Forward
Characteristics
IF, Instantaneous Forward Current (A)
8.3mS, single half
sine-wave, JEDEC
method.
TJ=TJmax
2.0
10
TJ=100 OC
1.0
0.1
TJ=25 OC
0.01
0
VF, Instantaneous Forward Voltage (V)
20
40
60
80
100
120
140
Percent of Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
100
CJ, Capacitance (pF)
f=1MHz
O
TJ=25 C
10
10
0.1
1
10
100
VR, Reverse Voltage (V)
REV:A
Page 2
QW-BG013
Comchip Technology CO., LTD.