Switching Diode 1N4148-G Voltage: 100V Current: 0.15A RoHS Device DO-35 Features -Surge overload ratings to 2 amperes peak. 1.02(26.00) Min. -Ideal for printed circuit board. Mechanical data 0.165(4.20) Max. -Case: Glass, DO-35 0.079(2.00) Max. -Lead: Axial leads,solderable per MIL-STD-202, Method 208 guaranteed. Terminal:Pure tin plated lead free. -Polarity:Indicated by cathode band. -Mounting Position: Any -Weight: 0.13gram 1.02(26.00) Min. ø 0.02(0.52)Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol Value Unit Maximum Repetitive Peak Voltage VRRM 100 V Maximum RMS Voltage VRMS 75 V Forward Repetitive Peak Current IFSM 500 mA Maximum Average Forward Current IF(AV) 150 mA Peak Forward Surge Current tp=1uS IFSN 2.0 A Typical Resistance Junction to Amvient Air (Note 1) RΘJA 350 K/W Operating and Storage Temperature Rang TJ,TSTG -65 to +200 °C Parameter Symbol Min Typ. Max Unit Forward Voltage at IF = 10 mA VF – – 1 V Leakage Current at VR= 20 V at VR= 75 V at VR= 20 V,TJ = 150°C IR IR IR – – 25 5 50 nA uA uA Reverse Recovery Time( Note 2) Trr – – 4. ns Parameter NTOES: (1) Thermal Resistance Junction to Ambient Air. (2) Reverse Recovery Test Conditions: IF=10mA,VR=6V,Irr=0.1 X IR,RL=100Ω. REV:A Page 1 QW-B0050 Comchip Technology CO., LTD. Switching Diode RATING AND CHARACTERISTIC CURVES (1N4148-G) Fig.1 - Maximum Forward Current Derating Curve Fig.2 - Maximum Non-Repetitive Forward Surge Current Per Bridge Elelment 3.5 Peak Forward Surge Current, (A) Average Forward Current, (mA) 250 200 150 100 50 0 8.3ms Single Half Sine Wave JEDEC Method 3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 1 200 10 Ambient Temperature, (°C) Number of Cycles at 60 Hz Fig.4 - Typical Reverse Characteristics Per Bridge Element 1000 Instantaneous Reverse Current, (uA) Instantaneoys Forward Current, (mA) Fig.3 - Typical Instantaneous Forward Characteristics Per Bridge Element 100 T J =150 °C 10 T J =25 °C 1.0 0.1 0.3 0.5 0.7 0.9 100 1.1 1.3 Instantaneous Forward Voltage, (V) 100 T J =150 °C 10 T J =100°C 1.0 0.1 T J =25°C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Reverse Recover Time Characteristics and Test Circuit Diagarm trr 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A 0 ( ) (+) 50Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE | | | | | | | | -0.25A (+) OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max. Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max. Source Impedance= 50 ohms. 1cm SET TIME BASE FOR 50 / 10ns / cm REV:A Page 2 QW-B0050 Comchip Technology CO., LTD. Switching Diode Taping Specification For Axial Lead Diodes E 90℃±5℃ Z A L1 B L2 T E DO-35 SYMBOL A B Z T E (mm) 5.00 ± 0.5 52.0 ± 1.5 1.2 (max) 6.0 ± 0.4 0.8 (max) 1.0 (max) (inch) 0.197± 0.020 2.047 ± 0.020 0.047 (max) 0.236 ± 0.016 0.032(max) 0.040 (max) L1-L2 Marking Code Part Number Marking Code 1N4148-G 1N4148 1N 41 48 Standard Packaging AMMO PACK Case Type DO-35 BOX CARTON ( pcs ) ( pcs ) 5,000 100,000 REV:A Page 3 QW-B0050 Comchip Technology CO., LTD.