COMCHIP CGRB304-G

SMD General Purpose Rectifiers
CGRB301-G Thru. CGRB307-G
Glass Passivated Type
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
DO-214AA (SMB)
Features
-Ideal for surface mount applications.
0.185(4.70)
0.160(4.06)
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
-Built in strain relief.
-High surge current capability.
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
Mechanical data
0.096(2.44)
0.083(2.13)
-Case: JEDEC DO-214AA, molded plastic.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
Dimensions in inches and (millimeter)
-Approx. weight: 0.093 grams
Maximum Ratings and Electrical Characteristics
Symbol
CGRB
301-G
CGRB
302-G
CGRB
303-G
CGRB
304-G
CGRB
305-G
CGRB
306-G
CGRB
307-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
100
A
IO
3.0
A
VF
1.1
V
IR
5.0
150
μA
RθJA
50
TJ
150
O
C
TSTG
-55 to +150
O
C
Parameter
Max. average forward current
Max. instantaneous forward
3.0A
voltage at
Max. DC reverse current at TA=25
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
O
C/W
Notes: 1. Thermal resistance from junction to terminal mounted on P.C.B. with 5.0×5.0 mm square2(0.13mm thick) land area.
REV:A
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Comchip Technology CO., LTD.
SMD General Purpose Rectifiers
RATING AND CHARACTERISTIC CURVES (CGRB301-G thru CGRB307-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
10
TJ=25 OC
Pulse width 300μS
4% duty cycle
O
Rever s e C urr e n t (μA )
100
F o r w a rd C u rren t(A)
TJ=125 C
10
1
TJ=25 OC
1
0.1
0.1
0.01
0.01
0
20
40
60
80
100
120
0
140
0.4
0.6
1.0
0.8
1.2
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Current Derating Curve
100
1.4
3.5
Averag e For ward C urre nt (A)
J u n c ti o n C apacian
t ce(p F )
0.2
10
TJ=25 OC
f=1MHz
Vsig=50mVp-p
1
0.1
Single phase, half
wave 60Hz, resistive
or inductive load
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
100
0
25
50
75
100
125
Ambient Temperature (
Reverse Voltage (V)
O
150
175
C)
Fig.5 Non-repetitive Forward Surge Current
120
Pe a k F o r w a rd S u rge C u r re nt(A )
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
100
80
60
40
20
0
1
10
100
Number of Cycles at 60Hz
REV:A
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QW-BG004
Comchip Technology CO., LTD.