COMCHIP CPDH3V3UP-HF

SMD ESD Protection Diode
CPDH3V3UP-HF
RoHS Device
Halogen Free
Features
SOD-523
-IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air).
-Working voltage: 3.3V
-Low leakage current.
-Low operating and clamping voltages.
0.008(0.20)
REF
0.051(1.30)
0.043(1.10)
0.033(0.85)
0.030(0.75)
0.014(0.35)
0.010(0.25)
Mechanical data
0.067(1.70)
0.059(1.50)
-Case: SOD-523 standard package ,molded plastic.
-Terminals: Solderable per MIL-STD-750, method 2026.
-Marking Code: E3
0.006(0.15)
0.003(0.08)
0.031(0.77)
0.020(0.51)
-Mounting position: Any
-Weight: 0.0012 gram(approx.).
0.003(0.07)
0.001(0.01)
Circuit Diagram
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
40
W
Peak pulse current
IPP
5
A
VESD
±20
±15
kV
Tj
-55 to +125
O
-55 to +125
O
Parameter
( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
TSTG
C
C
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Reverse stand-off voltage
Symbol Min Typ Max Unit
3.3
VRWM
V
Punch-through voltage
IPT = 2uA
VPT
3.5
V
Snap-back voltage
ISB = 50mA
VSB
2.8
V
Reverse leakage current
VRWM = 3.3V
IR
IPP = 1 A, tp=8/20us
0.5
uA
VC
5.5
V
IPP = 5 A, tp=8/20us
VC
8.0
V
Reverse clamping voltage
IPPR = 1 A, tp=8/20us
VCR
2.4
V
Junction capacitance
VR = 0 V, f = 1MHz
16
pF
0.05
Clamping voltage
Cj
12
REV:A
Page 1
QW-JP018
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDH3V3UP-HF)
Fig. 1 - Non-repetitive max. peak pulse power
vs. pulse time
Fig. 2 - Power rating derating curve
110
100
90
80
Power rating (%)
Max. peak pulse power-PPP(kW )
1
0.1
70
60
50
40
30
20
10
0.01
0
0.1
1
100
10
0
1000
25
50
75
100
Ambient temperature (
Pulse duration-tp(us)
Fig.3 - Clamping voltage vs.
peak pulse current
150
C)
Fig.4 - Forward voltage vs.
Forward current
16
12
Waveform
Parameters:
tr=8us
td=20us
14
10
12
Forward voltage (V)
Clamping voltage (V)
125
O
10
8
Waveform
Parameters:
tr=8us
td=20us
6
4
8
6
4
2
2
0
0
0
1
2
3
4
5
6
Peak pulse current(A)
0
1
2
3
4
5
6
Forward current(A)
Fig.5 - Junction capacitance vs.
reverse voltage
Normalized capacitance - Cj (pF)
20
16
12
8
4
0
0
1
2
3
4
Reverse voltage (V)
REV:A
Page 2
QW-JP018
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOD-523
SOD-523
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.90 ± 0.10
1.94 ± 0.10
0.73 ± 0.10
1.50 + 0.10
178 ± 1.00
54.40 ± 0.40
13.00 ± 0.20
(inch)
0.035 ± 0.004
0.076 ± 0.004
0.029 ± 0.004
0.059 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.079 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
REV:A
Page 3
QW-JP018
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDH3V3UP-HF
E3
E3
Suggested PAD Layout
SOD-523
SIZE
(mm)
(inch)
A
1.40
0.055
B
0.60
0.024
C
0.70
0.028
D
2.00
0.079
E
0.80
0.031
D
A
E
C
B
Standard Packaging
REEL PACK
Case Type
SOD-523
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:A
Page 4
QW-JP018
Comchip Technology CO., LTD.