COMCHIP MBRF1060CT-G

Comchip
Schottky Barrier Rectifiers
SMD Diode Specialist
MBRF1030CT-G Thru. MBRF10100CT-G
Voltage: 30 to 100 V
Current: 10.0 A
RoHS Device
Features
ITO-220AB
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
0.118(3.00)
0.102(2.60)
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.102(2.60)
0.138(3.50)
0.122(3.10)
0.406(10.30)
0.386( 9.80)
-Low power loss, high efficiency.
-High current capability.
-High surge capacity.
0.622(15.80)
0.583(14.80)
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.157(4.00)
0.118(3.00)
Mechanical Data
0.071
MAX
(1.80)
0.551(14.00)
0.511(13.00)
0.059(1.50)
0.043(1.10)
-Case: ITO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
0.031(0.80)
0.020(0.50)
0.028(0.70)
0.020(0.50)
0.105(2.67)
0.095(2.41)
-Polarity: As marked on the body.
0.114(2.90)
0.098(2.50)
-Mounting position: Any
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
MBRF
MBRF
MBRF
MBRF
MBRF
MBRF
MBRF
1030CT-G 1040CT-G 1045CT-G 1050CT-G 1060CT-G 1080CT-G 10100CT-G
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
30
40
45
50
60
80
100
V
Maximum RMS Voltage
VRMS
21
28
31.5
35
42
56
70
V
Maximum DC Blocking Voltage
VDC
30
40
45
50
60
80
100
V
Maximum Average Forward Rectified
Current ( See Fig.1 )
I(AV)
10
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
IFSM
120
A
0.70
0.57
0.80
0.70
[email protected] TJ= 25°C
Peak Forward Voltage
(Note 1)
[email protected] TJ=125°C
[email protected] TJ= 25°C
VF
[email protected] TJ=125°C
Maximum DC Reverse Current @ TJ= 25°C
at Rate DC Blocking Voltage
@ TJ= 125°C
IR
Typical Junction Capacitance (Note2)
CJ
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.1
mA
15
170
RθJC
V
220
3.0
300
pF
3.0
°C/W
TJ
-55 to +150
°C
TSTG
-55 to +175
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
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Comchip Technology CO., LTD.
Comchip
Schottky Barrier Rectifiers
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (MBRF1030CT-G Thru. MBRF10100CT-G)
FIG.1 - Forward Current Derating Curve
FIG.2 - Maximum Non-Repetitive Surge Current
Peak Forward Surge Current, (A)
Average Forward Current, (A)
10.0
8.0
6.0
4.0
Single Phase Half Wave
60Hz Resistive or
Inductive Load
2.0
0
300
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
250
200
150
100
50
0
0
25
75
50
100
125
150
175
10
1
Case Temperature, (°C)
FIG.3 - Typical Rever Characteristics
100
FIG.4 - Typical Forward Characteristics
100
1000
MBRF1030CT-G~MBRF1060CT-G
MBRF1080CT-G~MBRF10100CT-G
100
10
Instantaneous Forward Current, (A)
Instantaneous Reverse Current, (mA)
20
Number Of Cycles at 60Hz
TJ=125°C
1.0
TJ=75°C
0.1
TJ=25°C
MBRF1030CT-G~
MBRF1045CT-G
10
MBRF1050CT-G~
MBRF1060CT-G
MBRF1080CT-G~
MBRF10100CT-G
1.0
TJ=25°C
PULSE WIDTH 300US
2% DUTY CYCLE
0.1
0.01
0
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage, (V)
Percent Of Rated Peak Reverse Voltage, (%)
FIG.5 - Typical Junction Capacitance
10000
Capacitance, (pF)
TJ=25°C f=1MHz
1000
MBRF1050CT-G~
MBRF1060CT-G
MBRF1080CT-G~
MBRF10100CT-G
MBRF1030CT-G~
MBRF1045CT-G
100
0.1
1
10
100
Reverse Voltage, (V)
REV:A
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Comchip Technology CO., LTD.
Comchip
Schottky Barrier Rectifiers
SMD Diode Specialist
Marking Code
Part Number
Marking code
MBRF1030CT-G
MBRF1030CT
MBRF1040CT-G
MBRF1040CT
MBRF1045CT-G
MBRF1045CT
MBRF1050CT-G
MBRF1050CT
MBRF1060CT-G
MBRF1060CT
MBRF1080CT-G
MBRF1080CT
MBRF10100CT-G
MBRF10100CT
C
MBRF10XXXCT
XX / XXX = Product type marking code
C = Compchip Logo
Standard Packaging
TUBE PACK
Case Type
ITO-220AB
TUBE
BOX
( pcs )
( pcs )
50
2,000
REV:A
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Comchip Technology CO., LTD.