PNP BD684 TO3 (Temporary part number) SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO Ratings -VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage -IC Collector Current -IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature -IC -ICM -IBM @ Tmb = 25°C Value Unit 140 140 5 V V V 4 6 0.1 65 150 -65 to +150 A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Temporary data sheet Value Unit 3.12 100 K/W K/W 1 COMSET SEMICONDUCTORS PNP BD684 TO3 (Temporary part number) ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -ICBO Collector cut-off current -ICEO -IEBO -VCE(SAT) Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage hFE DC Current Gain Mx Unit IE=0 , -VCB= -VCEOMAX=140 V IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150°C IB=0 , -VCE= -1/2VCEOMAX=70 V IC=0, -VEB=5 V - - 0,2 1 0,2 5 mA mA -IC=1.5 A, -IB=6 Ma - - 2 V 750 10 - 2000 750 60 1,5 2,5 - V kHz V 0,8 - - A - 0,8 4,5 2 8 µs -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink (BD676 ; VCE=40 V ) -VBE hfe fhfe VF Min Typ Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time toff 1. Measured under pulse conditions :tP <300µs, δ <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Temporary data sheet 2 COMSET SEMICONDUCTORS mA