CYSTEKEC BTN3501F3

Spec. No. : C606F3
Issued Date : 2005.11.24
CYStech Electronics Corp.
Revised Date : 2005.11.30
Page No. : 1/6
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501F3
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
• Pb-free package
Symbol
Outline
BTN3501F3
TO-263
C
B
E
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
RθJC
Tj
Tstg
Limits
80
80
6
10
20 (Note 1)
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTN3501F3
CYStek Product Specification
Spec. No. : C606F3
Issued Date : 2005.11.24
CYStech Electronics Corp.
Revised Date : 2005.11.30
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
80
60
40
-
Typ.
0.3
1.0
50
130
Max.
10
50
0.6
1.5
-
Unit
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=30mA, IB=0
VCE=80V, VBE=0
VEB=5V, IC=0
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTN3501F3
Package
TO-263
(Pb-free)
Shipping
Marking
800 pcs / Tape & Reel
N3501
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
5000
2000
8mA
1500
6mA
1000
4mA
500
2mA
25mA
4500
10mA
Collector Current---IC(mA)
Collector Current---IC(mA)
2500
4000
20mA
3500
15mA
3000
2500
10mA
2000
1500
5mA
1000
IB=0mA
500
IB=0mA
0
0
0
BTN3501F3
2
4
Collector To Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
CYStek Product Specification
Spec. No. : C606F3
Issued Date : 2005.11.24
CYStech Electronics Corp.
Revised Date : 2005.11.30
Page No. : 3/6
Characteristic Curves(Cont.)
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
700
500uA
120
2.5mA
Collector Current---IC(mA)
Collector Current---IC(mA)
140
400uA
100
80
300uA
60
200uA
40
100uA
20
0
1
2
3
4
5
2mA
500
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
IB=0uA
0
600
0
0
6
Collector To Emitter Voltage---VCE(V)
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
VCE(SAT)
Saturation Voltage---(mV)
VCE = 5V
Current Gain---H FE
1
VCE = 2V
100
VCE = 1V
1000
IC = 20IB
IC = 50IB
100
IC = 10IB
10
10
1
10
100
1000
10000
1
Collector Current---I C (mA)
100
1000
10000
Collector Current---I C (mA)
Saturation Voltage vs Collector Current
Power Derating Curve
10000
2.5
VCE(SAT) @ IC = 10IB
Power Dissipation---P D(W)
Saturation Voltage---(mV)
10
1000
2
1.5
1
0.5
0
100
1
10
100
1000
Collector Current---I C (mA)
BTN3501F3
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C606F3
Issued Date : 2005.11.24
Revised Date : 2005.11.30
Page No. : 4/6
Characteristic Curves(Cont.)
Power Derating Curve
Power Dissipation---PD(W)
70
60
50
40
30
20
10
0
0
50
100
150
200
Case Temperature ---TC(℃ )
BTN3501F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C606F3
Issued Date : 2005.11.24
Revised Date : 2005.11.30
Page No. : 5/6
Reel Dimension
Carrier Tape Dimension
BTN3501F3
CYStek Product Specification
Spec. No. : C606F3
Issued Date : 2005.11.24
CYStech Electronics Corp.
Revised Date : 2005.11.30
Page No. : 6/6
TO-263 Dimension
Marking :
N3501
B
D
2
F
α1
2
1
E
C
A
α2
Style : Pin 1.Base
3
I
2.Collector
3.Emitter
G
J
K
L
α3
H
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN3501F3
CYStek Product Specification